生命周期: | Obsolete | 包装说明: | LEAD FREE, PLASTIC, D2PAK-3 |
Reach Compliance Code: | compliant | 风险等级: | 5.59 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 11 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 199 ns |
标称接通时间 (ton): | 40 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGS4B60KPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, |
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IRGS6B60K | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR |
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IRGS6B60KD | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
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IRGS6B60KDPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, |
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IRGS6B60KDTRLPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, |
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IRGS6B60KDTRRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, |
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IRGS6B60KPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR |
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IRGS6B60KTRL | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, D2PAK-3 |
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IRGS6B60KTRLPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, D2PAK-3 |
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IRGS6B60KTRRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, D2PAK-3 |
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