是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | compliant |
风险等级: | 5.01 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 12 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e0 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 225 | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 199 ns | 标称接通时间 (ton): | 40 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGS4B60KD1 | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
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IRGS4B60KD1PBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
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IRGS4B60KD1TRRPBF | INFINEON |
获取价格 |
暂无描述 |
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IRGS4B60KPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, |
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IRGS6B60K | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR |
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IRGS6B60KD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
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IRGS6B60KDPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, |
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IRGS6B60KDTRLPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, |
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IRGS6B60KDTRRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, |
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IRGS6B60KPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR |
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