是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | LEAD FREE, PLASTIC, D2PAK-3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 20 weeks 4 days |
风险等级: | 7.32 | Is Samacsys: | N |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 11 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
最大降落时间(tf): | 89 ns | 门极发射器阈值电压最大值: | 5.5 V |
门极-发射极最大电压: | 20 V | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 63 W | 认证状态: | Not Qualified |
最大上升时间(tr): | 23 ns | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 199 ns |
标称接通时间 (ton): | 40 ns | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRGS4B60KD1 | INFINEON |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGS4B60KD1TRRPBF | INFINEON |
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IRGS4B60KPBF | INFINEON |
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IRGS6B60K | INFINEON |
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IRGS6B60KD | INFINEON |
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IRGS6B60KDPBF | INFINEON |
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IRGS6B60KDTRLPBF | INFINEON |
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Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, |
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IRGS6B60KDTRRPBF | INFINEON |
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Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, |
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IRGS6B60KPBF | INFINEON |
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IRGS6B60KTRL | INFINEON |
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IRGS6B60KTRLPBF | INFINEON |
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Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, D2PAK-3 |
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