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IRGS4065TRLPBF

更新时间： 2024-01-26 04:02:28
品牌 Logo 应用领域
英飞凌 - INFINEON 栅晶体管
页数 文件大小 规格书
10页 788K
描述
Insulated Gate Bipolar Transistor, 70A I(C), 300V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3

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中文翻译

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IRGS4065TRLPBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：LEAD FREE, PLASTIC, D2PAK-3Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.21
外壳连接：COLLECTOR最大集电极电流 (IC)：70 A
集电极-发射极最大电压：300 V配置：SINGLE
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：2
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL认证状态：Not Qualified
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管元件材料：SILICON
标称断开时间 (toff)：560 ns标称接通时间 (ton)：58 ns
Base Number Matches：1

IRGS4065TRLPBF 数据手册

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PD - 97059B  
IRGB4065PbF  
IRGS4065PbF  
PDP TRENCH IGBT  
Features  
l
Advanced Trench IGBT Technology  
Key Parameters  
l
Optimized for Sustain and Energy Recovery  
circuits in PDP applications  
Low VCE(on) and Energy per Pulse (EPULSE  
for improved panel efficiency  
High repetitive peak current capability  
Lead Free package  
VCE min  
300  
V
V
A
TM  
VCE(ON) typ. @ IC = 70A  
IRP max @ TC= 25°C c  
TJ max  
1.75  
l
)
205  
150  
l
l
°C  
C
C
C
E
E
C
G
G
C
G
TO-220  
D2Pak  
IRGS4065DPbF  
E
IRGB4065DPbF  
n-channel  
G
C
E
Gate  
Collector  
Emitter  
Description  
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced  
trenchIGBTtechnologytoachievelowVCE(on) andlowEPULSETM ratingpersiliconareawhichimprovepanel  
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current  
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP  
applications.  
Absolute Maximum Ratings  
Max.  
Parameter  
Units  
VGE  
±30  
Gate-to-Emitter Voltage  
V
IC @ TC = 25°C  
IC @ TC = 100°C  
IRP @ TC = 25°C  
PD @TC = 25°C  
PD @TC = 100°C  
Continuous Collector Current, VGE @ 15V  
Continuous Collector, VGE @ 15V  
Repetitive Peak Current  
70  
A
40  
205  
178  
Power Dissipation  
W
71  
Power Dissipation  
1.4  
Linear Derating Factor  
W/°C  
°C  
TJ  
-40 to + 150  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature for 10 seconds  
Mounting Torque, 6-32 or M3 Screw  
300  
10lb in (1.1N m)  
N
Thermal Resistance  
Parameter  
Typ.  
Max.  
Units  
RθJC  
RθCS  
RθJA  
RθJA  
Junction-to-Case  
–––  
0.50  
–––  
–––  
0.70  
–––  
62  
Case-to-Sink, Flat Greased Surface , TO-220  
Junction-to-Ambient, TO-220  
Junction-to-Ambient (PCB Mount) , D2Pak  
°C/W  
40  
www.irf.com  
1
09/05/06  
1234567...10

中文翻译

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