Datasheet > IRGS4615DTRLPBF

IRGS4615DTRLPBF

更新时间： 2024-02-16 08:49:13

品牌	Logo	应用领域
英飞凌 - INFINEON		栅
页数	文件大小	规格书
12页	322K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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IRGS4615DTRLPBF 数据手册

IRGS4615DPbF

IRGB4615DPbF

Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

V_CES= 600V

I_C= 15A, T_C= 100°C

t_sc> 5µs, T_jmax= 175°C

V_{CE(on) typ.}= 1.55V @ 8A

D²-Pak

IRGS4615DPbF

TO-220AB

IRGB4615DPbF

n-channel

Gate

Collector

Emitter

Applications

• Appliance Drives

• Inverters

• UPS

→

Features

Benefits

Low V_CE(ON)and switching losses

High efficiency in a wide range of applications and switching frequencies

Improved reliability due to rugged hard switching performance and higher

power capability

Square RBSOA and maximum junction temperature 175°C

Positive V_CE(ON)temperature coefficient and tighter distribution of

parameters

Excellent current sharing in parallel operation

5μs short circuit SOA

Lead-free, RoHS compliant

Enables short circuit protection scheme

Environmentally friendly

Standard Pack

Form

Tube

Base part number

Package Type

Orderable Part Number

Quantity

IRGS4615DPbF

IRGS4615DTRRPbF

IRGS4615DTRLPbF

IRGB4615DPbF

IRGS4615DPbF

IRGS4615DTRRPbF

IRGS4615DTRLPbF

IRGB4615DPbF

D²PAK

Tape and Reel Right

Tape and Reel Left

Tube

800

TO-220AB

Absolute Maximum Ratings

Parameter

Max.

Units

600

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

Continuous Collector Current

Pulsed Collector Current, V_GE= 15V

I_LM

Clamped Inductive Load Current, V_GE= 20V

Diode Continuous Forward Current

Diode Maximum Forward Current

I_F@T_C=25°C

I_F@T_C=100°C

I_FM

± 20

± 30

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

Maximum Power Dissipation

V_GE

P_D@ T_C=25°

P_D@ T_C=100°

T_J

Maximum Power Dissipation

Operating Junction and

-40 to + 175

°C

T_STG

Storage Temperature Range

300

Soldering Temperature, for 10 seconds (1.6mm from case)

10lbf. In (1.1 N.m)

Mounting Torque, 6-32 or M3 Screw

TO-220

Submit Datasheet Feedback

October 25, 2013

12 3 4 5 6 7...12

中文翻译

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IRGS4615DTRLPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRGS4615DPBF	INFINEON	类似代替	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

与IRGS4615DTRLPBF相关器件

型号	品牌	获取价格	描述	数据表
IRGS4615DTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGS4620DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGS4620DPBF_15	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGS4620DTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGS4620DTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGS4630DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGS4630DPBF_15	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGS4640DTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRGS4640DTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor
IRGS4715DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor,

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