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IRGS4607DPBF

更新时间： 2024-02-04 01:16:02
品牌 Logo 应用领域
英飞凌 - INFINEON 栅
页数 文件大小 规格书
16页 838K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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中文翻译

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IRGS4607DPBF 数据手册

 浏览型号IRGS4607DPBF的Datasheet PDF文件第2页浏览型号IRGS4607DPBF的Datasheet PDF文件第3页浏览型号IRGS4607DPBF的Datasheet PDF文件第4页浏览型号IRGS4607DPBF的Datasheet PDF文件第5页浏览型号IRGS4607DPBF的Datasheet PDF文件第6页浏览型号IRGS4607DPBF的Datasheet PDF文件第7页 
IRGR4607DPbF  
IRGS4607DPbF  
IRGB4607DPbF  
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  
VCES = 600V  
C
C
C
C
IC = 7.0A, TC =100°C  
E
E
C
G
E
G
C
tSC 5µs, TJ(max) = 175°C  
CE(ON) typ. = 1.75V @ IC = 4.0A  
G
G
E
IRGB4607DPbF  
TO-220AB  
IRGR4607DPbF  
D-Pak  
IRGS4607DPbF  
D2Pak  
V
n-channel  
Applications  
• Industrial Motor Drive  
• UPS  
G
Gate  
C
E
Collector  
Emitter  
• Solar Inverters  
• Welding  
Features  
Benefits  
Low VCE(ON) and Switching Losses  
5µs Short Circuit SOA  
Square RBSOA  
High Efficiency in a Wide Range of Applications  
Rugged Transient Performance  
Maximum Junction Temperature 175°C  
Positive VCE (ON) Temperature Coefficient  
Increased Reliability  
Excellent Current Sharing in Parallel Operation  
Base part number  
IRGR4607DPbF  
IRGS4607DPbF  
Package Type  
Standard Pack  
Form  
Tube  
Orderable Part Number  
Quantity  
75  
2000  
3000  
3000  
50  
IRGR4607DPbF  
IRGR4607DTRPbF  
IRGR4607DTRLPbF  
IRGR4607DTRRPbF  
IRGS4607DPBF  
IRGS4607DTRRPbF  
IRGS4607DTRLPbF  
IRGB4607DPbF  
Tape and Reel  
Tape and Reel Left  
Tape and Reel Right  
Tube  
Tape and Reel Right  
Tape and Reel Left  
Tube  
D-Pak  
D2Pak  
800  
800  
50  
IRGB4607DPbF  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Max.  
Units  
VCES  
600  
11  
7.0  
12  
16  
8.0  
5.0  
16  
V
IC @ TC = 25°C  
IC @ TC = 100°C  
ICM  
Continuous Collector Current  
Pulse Collector Current, VGE = 15V  
Clamped Inductive Load Current, VGE = 20V  
Diode Continuous Forward Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current   
Continuous Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Maximum Power Dissipation  
A
ILM  
IF @ TC = 25°C  
IF @ TC = 100°C  
IFM  
±20  
±30  
58  
VGE  
V
PD @ TC = 25°C  
PD @ TC = 100°C  
W
Maximum Power Dissipation  
29  
TJ  
Operating Junction and  
-40 to +175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec. (1.6mm) from case)  
Mounting Torque, 6-32 or M3 Screw  
°C  
300 (0.063 in.  
10 lbf·in (1.1 N·m)  
1
www.irf.com  
© 2014 International Rectifier  
Submit Datasheet Feedback  
November 14, 2014  
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