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IRGS4064DTRLPBF PDF预览

IRGS4064DTRLPBF

更新时间： 2024-02-16 10:42:00
品牌 Logo 应用领域
英飞凌 - INFINEON 栅
页数 文件大小 规格书
11页 296K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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IRGS4064DTRLPBF 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.64峰值回流温度（摄氏度）：NOT SPECIFIED
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

IRGS4064DTRLPBF 数据手册

 浏览型号IRGS4064DTRLPBF的Datasheet PDF文件第2页浏览型号IRGS4064DTRLPBF的Datasheet PDF文件第3页浏览型号IRGS4064DTRLPBF的Datasheet PDF文件第4页浏览型号IRGS4064DTRLPBF的Datasheet PDF文件第5页浏览型号IRGS4064DTRLPBF的Datasheet PDF文件第6页浏览型号IRGS4064DTRLPBF的Datasheet PDF文件第7页 
PD - 96424  
IRGS4064DPbF  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
C
ULTRAFAST SOFT RECOVERY DIODE  
VCES = 600V  
Features  
IC = 10A, TC = 100°C  
tsc > 5µs, Tjmax = 175°C  
VCE(on) typ. = 1.6V  
• Low VCE (on) Trench IGBT Technology  
• Low Switching Losses  
• Maximum Junction temperature 175 °C  
• 5μs SCSOA  
G
E
• Square RBSOA  
• 100% of The Parts Tested for (ILM  
• Positive VCE (on) Temperature Coefficient.  
• Ultra Fast Soft Recovery Co-pak Diode  
• Tighter Distribution of Parameters  
• Lead-Free Package  
n-channel  
)
C
Benefits  
• High Efficiency in a Wide Range of Applications  
• Suitable for a Wide Range of Switching Frequencies due  
to Low VCE (ON) and Low Switching Losses  
• Rugged Transient Performance for Increased Reliability  
• Excellent Current Sharing in Parallel Operation  
• Low EMI  
E
C
G
D2Pak  
G
C
E
Gate  
Collector  
Emitter  
Absolute Maximum Ratings  
Parameter  
Units  
Max.  
VCES  
Collector-to-Emitter Breakdown Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current  
600  
V
IC@ TC = 25°C  
IC@ TC = 100°C  
ICM  
20  
10  
40  
Clamped Inductive Load Current  
ILM  
40  
A
IF@TC=25°C  
IF@TC=100°C  
IFM  
Diode Continuous Forward Current  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
20  
10  
40  
Continuous Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
±20  
±30  
101  
50  
V
VGE  
PD @ TC =25°  
PD @ TC =100°  
TJ  
W
°C  
-55 to + 175  
300 (0.063 in. (1.6mm) from case)  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Thermal Resistance  
Parameter  
Junction-to-Case - IGBT  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
–––  
0.50  
–––  
1.5  
Max.  
1.49  
3.66  
–––  
40  
Units  
°C/W  
g
Rθ  
JC  
Junction-to-Case - Diode  
Rθ  
JC  
Rθ  
CS  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Weight  
Rθ  
JA  
Wt  
1
www.irf.com  
02/16/12  
1234567...11

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