Datasheet > IRGS30B60KTRR

IRGS30B60KTRR

更新时间： 2023-01-03 07:57:55

品牌	Logo	应用领域
英飞凌 - INFINEON		电动机控制栅晶体管
页数	文件大小	规格书
14页	380K
描述
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, PLASTIC, D2PAK-3

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IRGS30B60KTRR 数据手册

PD - 97003

IRGB30B60KPbF

IRGS30B60KPbF

IRGSL30B60KPbF

V_CES= 600V

INSULATED GATE BIPOLAR TRANSISTOR

Features

I_C= 50A, T_C=100°C

at T_J=175°C

• Low VCE (on) Non Punch Through IGBT Technology

• 10µs Short Circuit Capability

• Square RBSOA

t_sc> 10µs, T_J=150°C

V_CE(on)typ. = 1.95V

• Positive VCE (on) Temperature Coefficient

• Maximum Junction Temperature rated at 175°C

• Lead-Free

n-channel

Benefits

• Benchmark Efficiency for Motor Control

• Rugged Transient Performance

• Low EMI

• Excellent Current Sharing in Parallel Operation

D²Pak

IRGS30B60KPbF IRGSL30B60KPbF

TO-262

TO-220AB

IRGB30B60KPbF

Absolute Maximum Ratings

Parameter

Max.

600

Units

Collector-to-Emitter Voltage

V_CES

Continuous Collector Current

Pulse Collector Current (Ref.Fig.C.T.5)

Clamped Inductive Load current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

120

I_CM

120

I_LM

RMS Isolation Voltage, Terminal to Case, t=1 min.

Gate-to-Emitter Voltage

2500

±20

V_ISOL

V_GE

Maximum Power Dissipation

370

P_D@ T_C= 25°C

Maximum Power Dissipation

180

P_D@ T_C= 100°C

Operating Junction and

-55 to +175

T_J

Storage Temperature Range

°C

T_STG

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal / Mechanical Characteristics

Parameter

Min.

–––

Typ.

–––

Max.

0.41*

–––

Units

°C/W

R_θ

Junction-to-Case- IGBT

Case-to-Sink, flat, greased surface

0.50

–––

Junction-to-Ambient, typical socket mount

Junction-to-Ambient (PCB Mount, Steady State)

–––

Weight

1.44

–––

* R_θJC(end of life) = 0.65°C/W. This is the maximum measured value after 1000 temperature cycles from -55 to 150°C

and is accounted for by the physical wearout of the die attach medium.

www.irf.com

05/17/05

12 3 4 5 6 7...14

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与IRGS30B60KTRR相关器件

型号	品牌	获取价格	描述	数据表
IRGS30B60KTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC,
IRGS4045DPbF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE
IRGS4045DPDF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE
IRGS4045DTRLPbF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE
IRGS4045DTRRPbF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE
IRGS4055PBF	INFINEON	获取价格	PDP TRENCH 1GBT
IRGS4056DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGS4062DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGS4062DTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
IRGS4062DTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE

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