Datasheet > IRGS4045DPDF

IRGS4045DPDF

更新时间： 2024-02-01 20:34:15

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管晶体管栅软恢复二极管快速软恢复二极管
页数	文件大小	规格书
12页	322K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE

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中文翻译

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数据手册

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IRGS4045DPDF 数据手册

IRGS4045DPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

V_CES= 600V

I_C 6.0A, T_C= 100°C

t_sc> 5µs, T_jmax= 175°C

V_{CE(on) typ.} 1.7V

D²-Pak

IRGS4045DPbF

n-channel

Applications

 Appliance Motor Drive

 Inverters

 SMPS

Gate

Colletor

Emitter



Features

Benefits

High efficiency in a wide range of applications and

switching frequencies

Low V_CE(ON)and switching losses

Improved reliability due to rugged hard switching performance

and higher power capability

Square RBSOA and maximum junction temperature 175°C

Positive V_CE(ON)temperature coefficient and tighter

distribution of parameters

Excellent current sharing in parallel operation

5μs short circuit SOA

Ultra fast soft recovery copak diode

Lead-free, RoHS compliant

Enables short circuit protection scheme

Performance optimized for motor drive operation

Environmentally friendly

Base part number

Package Type

Standard Pack

Form

Tube

Orderable Part Number

Quantity

IRGS4045DPbF

D2Pak

IRGS4045DPbF

IRGS4045DTRLPbF

IRGS4045DTRRPbF

Tape and Reel Left

Tape and Reel Right

800

Absolute Maximum Ratings

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Breakdown Voltage

Continuous Collector Current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

6.0

Continuous Collector Current

Pulsed Collector Current, V_GE= 15V

Clamped Inductive Load Current, V_GE= 20V

Diode Continuous Forward Current

Diode Maximum Forward Current

I_LM

8.0

4.0

I_F@T_C=25°C

I_F@T_C=100°C

I_FM

± 20

± 30

Continuous Gate-to-Emitter Voltage

Transient Gate-to-Emitter Voltage

Maximum Power Dissipation

V_GE

P_D@ T_C=25°

P_D@ T_C=100°

T_J

Maximum Power Dissipation

Operating Junction and

°C

-55 to + 175

300 (0.063 in. (1.6mm) from case)

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Thermal Resistance

Parameter

Junction-to-Case - IGBT

Min.

–––

Typ.

–––

0.5

Max.

1.9

Units

R_

Junction-to-Case - Diode

R_

6.3

°C/W

R_

Case-to-Sink, Flat, Greased Surface

–––

R_

Junction-to-Ambient (PCB Mountet, steady-state)

–––

*Qualification standards can be found at http://www.irf.com/

October 10, 2012

12 3 4 5 6 7...12

中文翻译

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与IRGS4045DPDF相关器件

型号	品牌	获取价格	描述	数据表
IRGS4045DTRLPbF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE
IRGS4045DTRRPbF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH UL TRAFAST SOFT RECOVERY DIODE
IRGS4055PBF	INFINEON	获取价格	PDP TRENCH 1GBT
IRGS4056DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGS4062DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGS4062DTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
IRGS4062DTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 48A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE
IRGS4064DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel,
IRGS4064DTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
IRGS4065PBF	INFINEON	获取价格	PDP TRENCH IGBT

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