是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | INT-A-PAK | 包装说明: | FLANGE MOUNT, R-PUFM-X4 |
针数: | 4 | Reach Compliance Code: | unknown |
风险等级: | 5.74 | 其他特性: | LOW CONDUCTION LOSS |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 400 A |
集电极-发射极最大电压: | 1200 V | 配置: | SINGLE WITH BUILT-IN DIODE |
门极发射器阈值电压最大值: | 5.5 V | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-PUFM-X4 | 元件数量: | 1 |
端子数量: | 4 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 2770 W | 最大功率耗散 (Abs): | 2770 W |
认证状态: | Not Qualified | 最大上升时间(tr): | 800 ns |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
晶体管应用: | MOTOR CONTROL | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 650 ns | 标称断开时间 (toff): | 550 ns |
最大开启时间(吨): | 550 ns | 标称接通时间 (ton): | 400 ns |
VCEsat-Max: | 2.7 V | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGRDN600K06 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 680A I(C) | |
IRGRDN600M06 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 800A I(C) | |
IRGS10B60KD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGS10B60KDPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGS14B40L | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 430V V(BR)CES | 18A I(C) | TO-252VAR | |
IRGS14C40L | INFINEON |
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IGBT with on-chip Gate-Emitter and Gate-Collector clamps | |
IRGS14C40LPBF | INFINEON |
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IGBT with on-chip Gate-Emitter and Gate-Collector clamps | |
IRGS14C40LTRLP | INFINEON |
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IGBT with on-chip Gate-Emitter and Gate-Collector clamps | |
IRGS15B60KD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE | |
IRGS15B60KDPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |