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IRGPH50M

更新时间： 2024-11-05 22:32:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管栅
页数	文件大小	规格书
6页	225K
描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=23A)

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PD - 9.1030

IRGPH50M

Short Circuit Rated

Fast IGBT

INSULATED GATE BIPOLAR TRANSISTOR

Features

• Short circuit rated - 10µs @ 125°C, V _GE= 15V

• Switching-loss rating includes all "tail" losses

• Optimized for medium operating frequency (1 to

10kHz) See Fig. 1 for Current vs. Frequency

V_CES= 1200V

_CE(sat)≤ 2.9V

curve

@V_GE= 15V, I_C= 23A

n-channel

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have

higher usable current densities than comparable bipolar transistors, while at

the same time having simpler gate-drive requirements of the familiar power

MOSFET. They provide substantial benefits to a host of high-voltage, high-

current applications.

These new short circuit rated devices are especially suited for motor control

and other applications requiring short circuit withstand capability.

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

1200

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

t_sc

±20

µs

V_GE

E_ARV

Reverse Voltage Avalanche Energy

Maximum Power Dissipation

P_D@ T_C= 25°C

200

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting torque, 6-32 or M3 screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Junction-to-Case

Min.

—

Typ.

—

Max.

0.64

—

Units

°C/W

R_θJC

R_θCS

R_θJA

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

—

0.24

—

6 (0.21)

—

g (oz)

Revision 1

C-471

To Order

12 3 4 5 6

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与IRGPH50M相关器件

型号	品牌	获取价格	描述	数据表
IRGPH50MD2	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=23
IRGPH50S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=33A)
IRGPH50SPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 57A I(C), 1200V V(BR)CES, N-Channel, TO-247AC
IRGPH50U	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, TO-247
IRGPH60UD2	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRGPS4067DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 195A I(C), 600V V(BR)CES, N-Channel, TO-274AA, ROHS COM
IRGPS40B120U	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR
IRGPS40B120UD	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGPS40B120UDP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGPS40B120UDPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel, SUPER-247, 3 PIN

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