是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | TO-252AA |
包装说明: | LEAD FREE, DPAK-3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.26 |
最大集电极电流 (IC): | 7.8 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | 最大降落时间(tf): | 105 ns |
门极发射器阈值电压最大值: | 5.5 V | 门极-发射极最大电压: | 20 V |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 52 W | 认证状态: | Not Qualified |
最大上升时间(tr): | 22 ns | 子类别: | Insulated Gate BIP Transistors |
表面贴装: | YES | 端子面层: | MATTE TIN OVER NICKEL |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | MOTOR CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 211 ns |
标称接通时间 (ton): | 35 ns |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGR3B60KD2TRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FRE |
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IRGR3B60KD2TRRP | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
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IRGR3B60KD2TRRPBF | INFINEON |
获取价格 |
暂无描述 |
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IRGR4045DPBF | INFINEON |
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
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IRGR4607DPBF | INFINEON |
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Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMP |
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IRGR4607DTRLPBF | INFINEON |
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Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMP |
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IRGR4607DTRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMP |
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IRGR4607DTRRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMP |
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IRGR4610DPBF | INFINEON |
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Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode |
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IRGR4610DTRLPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode |
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