Datasheet > 晶体管 > IGBT> IRGR3B60KD2TRRP

IRGR3B60KD2TRRP

更新时间： 2024-11-09 12:49:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管双极型晶体管栅超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
14页	318K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

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中文翻译

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数据手册
替代型号

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IRGR3B60KD2TRRP 数据手册

PD - 95036

IRGR3B60KD2PbF

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

Features

V_CES= 600V

• Low VCE (on) Non Punch Through IGBT Technology.

• Low Diode VF.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive VCE (on) Temperature Coefficient.

• Lead-Free

I_C= 4.2A, T_C=100°C

t_sc> 10µs, T_J=150°C

V_CE(on)typ. = 1.9V

n-channel

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

D-Pak

Absolute Maximum Ratings

Parameter

Max.

600

Units

Collector-to-Emitter Voltage

V_CES

Continuous Collector Current

Pulse Collector Current (Ref.Fig.C.T.5)

Clamped Inductive Load current

Diode Continous Forward Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

7.8

I_C@ T_C= 25°C

4.2

I_C@ T_C= 100°C

15.6

6.0

I_CM

I_LM

I_F@ Tc = 25°C

3.2

I_F@ Tc = 100°C

15.6

±20

I_FM

V_GE

Maximum Power Dissipation

Operating Junction and

P_D@ T_C= 25°C

P_D@ T_C= 100°C

-55 to +150

T_J

Storage Temperature Range

Soldering Temperature Range, for 10 sec.

°C

T_STG

300 (0.063 in. (1.6mm) from case)

Thermal / Mechanical Characteristics

Parameter

Min.

–––

Typ.

–––

0.3

Max.

2.4

Units

R_θ

Junction-to-Case- IGBT

°C/W

Junction-to-Case- Diode

8.8

Junction-to-Ambient, (PCB Mount)

Weight

–––

www.irf.com

2/23/04

12 3 4 5 6 7...14

中文翻译

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IRGR3B60KD2TRRP 替代型号

型号	品牌	替代类型	描述	数据表
IRGR3B60KD2TRLP	INFINEON	完全替代	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

与IRGR3B60KD2TRRP相关器件

型号	品牌	获取价格	描述	数据表
IRGR3B60KD2TRRPBF	INFINEON	获取价格	暂无描述
IRGR4045DPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGR4607DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMP
IRGR4607DTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMP
IRGR4607DTRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMP
IRGR4607DTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMP
IRGR4610DPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGR4610DTRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGR4610DTRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGR4610DTRRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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