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IRGR4610DTRLPBF PDF预览

IRGR4610DTRLPBF

更新时间： 2024-02-08 11:32:51
品牌 Logo 应用领域
英飞凌 - INFINEON 栅
页数 文件大小 规格书
15页 408K
描述
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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中文翻译

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IRGR4610DTRLPBF 数据手册

 浏览型号IRGR4610DTRLPBF的Datasheet PDF文件第2页浏览型号IRGR4610DTRLPBF的Datasheet PDF文件第3页浏览型号IRGR4610DTRLPBF的Datasheet PDF文件第4页浏览型号IRGR4610DTRLPBF的Datasheet PDF文件第5页浏览型号IRGR4610DTRLPBF的Datasheet PDF文件第6页浏览型号IRGR4610DTRLPBF的Datasheet PDF文件第7页 
IRGR4610DPbF  
IRGS4610DPbF  
IRGB4610DPbF  
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  
C
C
VCES = 600V  
C
C
IC = 10A, TC = 100°C  
tsc > 5µs, Tjmax = 175°C  
VCE(on) typ. = 1.7V @ 6A  
E
E
E
C
G
G
G
G
D-Pak  
D2-Pak  
TO-220AB  
E
IRGR4610DPbF  
IRGS4610DPbF IRGB4610DPbF  
n-channel  
G
Gate  
C
E
Applications  
• Appliance Drives  
• Inverters  
• UPS  
Collector  
Emitter  
→
Features  
Low VCE(ON) and switching losses  
Benefits  
High efficiency in a wide range of applications and switching frequencies  
Improved reliability due to rugged hard switching performance and higher  
power capability  
Square RBSOA and maximum junction temperature 175°C  
Positive VCE(ON) temperature coefficient and tighter distribution of  
parameters  
Excellent current sharing in parallel operation  
5μs short circuit SOA  
Lead-free, RoHS compliant  
Enables short circuit protection scheme  
Environmentally friendly  
Standard Pack  
Form  
Tube  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
75  
IRGR4610DPbF  
IRGR4610DTRPbF  
IRGR4610DTRRPbF  
IRGR4610DTRLPbF  
IRGS4610DPbF  
IRGS4610DTRRPbF  
IRGS4610DTRLPbF  
IRGB4610DPbF  
Tape and Reel  
Tape and Reel Right  
Tape and Reel Left  
Tube  
Tape and Reel Right  
Tape and Reel Left  
Tube  
2000  
3000  
3000  
50  
IRGR4610DPbF  
D-PAK  
D2 PAK  
IRGS4610DPbF  
IRGB4610DPbF  
800  
800  
50  
TO-220AB  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
600  
16  
10  
18  
24  
10  
6
VCES  
Collector-to-Emitter Breakdown Voltage  
Continuous Collector Current  
V
IC@ TC = 25°C  
IC@ TC = 100°C  
ICM  
Continuous Collector Current  
Pulsed Collector Current, VGE = 15V  
ILM  
Clamped Inductive Load Current, VGE = 20V  
Diode Continuous Forward Current  
Diode Continuous Forward Current  
A
IF @ TC = 25°C  
IF @ TC=100°C  
IFM  
24  
± 20  
± 30  
77  
Diode Maximum Forward Current ‚  
Continuous Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Maximum Power Dissipation  
V
VGE  
PD @ TC =25°  
PD @ TC =100°  
TJ  
W
39  
Maximum Power Dissipation  
Operating Junction and  
-40 to + 175  
300  
°C  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
10lbf. In (1.1 N.m)  
Mounting Torque, 6-32 or M3 Screw  
TO-220  
1
www.irf.com © 2013 International Rectifier  
Submit Datasheet Feedback  
October 25, 2013  
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中文翻译

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IRGR4610DTRLPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRGR4610DTRPBF INFINEON

完全替代

 Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
IRGR4610DPBF INFINEON

类似代替

 Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode

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