IRGR3B60KD2TRRPBF

更新时间： 2024-02-03 03:54:58

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体二极管双极型晶体管电动机控制双极性晶体管栅超快软恢复二极管快速软恢复二极管
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13页	258K
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PD - 94601A

IRGR3B60KD2

INSULATED GATE BIPOLAR TRANSISTOR WITH

ULTRAFAST SOFT RECOVERY DIODE

V_CES= 600V

Features

• Low VCE (on) Non Punch Through IGBT Technology.

• Low Diode VF.

• 10µs Short Circuit Capability.

• Square RBSOA.

• Ultrasoft Diode Reverse Recovery Characteristics.

• Positive VCE (on) Temperature Coefficient.

I_C= 4.2A, T_C=100°C

t_sc> 10µs, T_J=150°C

V_CE(on)typ. = 1.9V

n-channel

Benefits

• Benchmark Efficiency for Motor Control.

• Rugged Transient Performance.

• Low EMI.

• Excellent Current Sharing in Parallel Operation.

D-Pak

Absolute Maximum Ratings

Parameter

Max.

600

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

I_C@ T_C= 25°C

7.8

I_C@ T_C= 100°C Continuous Collector Current

4.2

I_CM

Pulse Collector Current (Ref.Fig.C.T.5)

15.6

6.0

Clamped Inductive Load current

Diode Continous Forward Current

I_LM

I_F@ Tc = 25°C

I_F@ Tc = 100°C Diode Continuous Forward Current

3.2

I_FM

Diode Maximum Forward Current

Gate-to-Emitter Voltage

15.6

±20

V_GE

P_D@ T_C= 25°C Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature Range, for 10 sec.

°C

300 (0.063 in. (1.6mm) from case)

Thermal / Mechanical Characteristics

Parameter

Min.

–––

Typ.

–––

0.3

Max.

2.4

Units

R_θJC

R_θJA

Junction-to-Case- IGBT

°C/W

Junction-to-Case- Diode

8.8

Junction-to-Ambient, (PCB Mount)

Weight

–––

www.irf.com

03/24/03

12 3 4 5 6 7...13

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