生命周期: | Obsolete | 包装说明: | ROHS COMPLIANT, PLASTIC, DPAK-3/2 |
Reach Compliance Code: | unknown | 风险等级: | 5.63 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 11 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE WITH BUILT-IN DIODE |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 2 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 95 ns | 标称接通时间 (ton): | 51 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRGR4607DTRRPBF | INFINEON |
完全替代 |
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMP | |
IRGR4607DPBF | INFINEON |
类似代替 |
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMP |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRGR4607DTRRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel, TO-252AA, ROHS COMP | |
IRGR4610DPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRGR4610DTRLPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRGR4610DTRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRGR4610DTRRPBF | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode | |
IRGRDN200M12 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 420A I(C) | |
IRGRDN300K06 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 340A I(C) | |
IRGRDN300M06 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 400A I(C) | |
IRGRDN300M12 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 560A I(C) | |
IRGRDN400K06 | ETC |
获取价格 |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 520A I(C) |