Datasheet > IRGR2B60KDPBF

IRGR2B60KDPBF

更新时间： 2024-02-25 00:28:57

品牌	Logo	应用领域
英飞凌 - INFINEON		软恢复二极管快速软恢复二极管
页数	文件大小	规格书
12页	751K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE

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中文翻译

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数据手册
替代型号

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IRGR2B60KDPBF 数据手册

IRGR2B60KDPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST

SOFT RECOVERY DIODE

V_CES= 600V

I_C= 3.7A, T_C= 100°C

T_J(MAX)= 150°C

Features

 Low V_{CE (ON)}Non Punch Through IGBT technology

 Low Diode V_F

 10µs Short Circuit Capability

 Square RBSOA

 Ultra-soft Diode Reverse Recovery Characteristics

 Positive V_{CE (ON)}temperature co-efficient

 Lead-free

V_CE(ON)typ. = 1.95V

n-channel

Benefits

 Benchmark Efficiency for Motor Control

 Rugged transient performance for increased reliability

 Excellent current sharing in parallel operation

 Low EMI

D-Pak

Gate

Emitter

Collector

Base part number

Package Type

Standard Pack

Form

Orderable Part Number

Quantity

IRGR2B60KDPbF

D-Pak

Tube

IRGR2B60KDPbF

IRGR2B60KDTRPbF

IRGR2B60KDTRLPbF

IRGR2B60KDTRRPbF

Tape and Reel

2000

3000

Tape and Reel Left

Tape and Reel Right

Absolute Maximum Ratings

Parameter

Collector-to-Emitter Voltage

I_C@ T_C= 25°C Continuous Collector Current

I_C@ T_C= 100°C Continuous Collector Current

Pulse Collector Current, V_GE= 15V 

Clamped Inductive Load Current, V_GE= 20V 

I_F@ T_C= 25°C Diode Continuous Forward Current

I_F@ T_C= 100°C Diode Continuous Forward Current

Diode Maximum Forward Current 

Continuous Gate-to-Emitter Voltage

P_D@ T_C= 25°C Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

Max.

600

6.3

3.7

8.0

6.3

3.7

8.0

±20

Units

V_CES

I_CM

I_LM

I_FM

V_GE

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

°C

300

(0.063 in.(1.6mm) from case)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

Max.

3.56

7.70

Units

R_θJC(IGBT) Junction-to-Case (IGBT) 

R_θJC(Diode) Junction-to-Case (Diode) 

°C/W

R_θJA

Junction-to-Ambient (PCB Mount) 

www.irf.com

January 8, 2013

12 3 4 5 6 7...12

中文翻译

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IRGR2B60KDPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRGR2B60KDTRRPBF	INFINEON	类似代替	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE
IRGR2B60KDTRPBF	INFINEON	类似代替	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE
IRGR2B60KDTRLPBF	INFINEON	类似代替	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE

与IRGR2B60KDPBF相关器件

型号	品牌	获取价格	描述	数据表
IRGR2B60KDPBF_15	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE
IRGR2B60KDTRLPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE
IRGR2B60KDTRPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE
IRGR2B60KDTRRPBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-FAST SOFT RECOVERY DIODE
IRGR3B60KD2	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGR3B60KD2PBF	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGR3B60KD2TRL	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, DPAK-3
IRGR3B60KD2TRLP	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
IRGR3B60KD2TRLPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FRE
IRGR3B60KD2TRPBF	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 7.8A I(C), 600V V(BR)CES, N-Channel, TO-252AA, LEAD FRE

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