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IRGPS66160DPBF PDF预览

IRGPS66160DPBF

更新时间： 2024-02-12 09:28:03
品牌 Logo 应用领域
英飞凌 - INFINEON 栅功率控制晶体管
页数 文件大小 规格书
12页 654K
描述
Insulated Gate Bipolar Transistor, 240A I(C), 600V V(BR)CES, N-Channel, TO-274AA,

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IRGPS66160DPBF 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：IN-LINE, R-PSIP-T3Reach Compliance Code：unknown
风险等级：5.71外壳连接：COLLECTOR
最大集电极电流 (IC)：240 A集电极-发射极最大电压：600 V
配置：SINGLE WITH BUILT-IN DIODEJEDEC-95代码：TO-274AA
JESD-30 代码：R-PSIP-T3元件数量：1
端子数量：3最低工作温度：-40 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：260
极性/信道类型：N-CHANNEL表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：30晶体管应用：POWER CONTROL
晶体管元件材料：SILICON标称断开时间 (toff)：350 ns
标称接通时间 (ton)：210 nsBase Number Matches：1

IRGPS66160DPBF 数据手册

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IRGPS66160DPbF  
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode  
VCES = 600V  
C
IC = 160A, TC =100°C  
tSC 5µs, TJ(max) = 175°C  
VCE(ON) typ. = 1.65V @ IC = 120A  
G
E
IRGPS66160DPbF  
n-channel  
Super 247  
Applications  
 Welding  
G
C
E
 H Bridge Converters  
Gate  
Collector  
Emitter  
Features  
Benefits  
Low VCE(ON) and Switching Losses  
High Efficiency in a Wide Range of Applications  
Optimized Diode for Full Bridge Hard Switch Converters  
Optimized for Welding and H Bridge Converters  
Improved Reliability due to Rugged Hard Switching  
Performance and High Power Capability  
Enables Short Circuit Protection Operation  
Excellent Current Sharing in Parallel Operation  
Environmentally friendly  
Square RBSOA and Maximum Temperature of 175°C  
5µs Short Circuit  
Positive VCE (ON) Temperature Co-efficient  
Lead-free, RoHS compliant  
Base part number  
Package Type  
Standard Pack  
Orderable Part Number  
Form  
Quantity  
IRGPS66160DPbF  
Super 247  
Tube  
25  
IRGPS66160DPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
IC @ TC = 25°C  
IC @ TC = 100°C  
ICM  
ILM  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulse Collector Current, VGE = 15V  
600  
240  
160  
360  
480  
V
A
Clamped Inductive Load Current, VGE = 20V  
IFRM @ TC = 100°C Diode Repetitive Peak Forward Current  
80  
IFM  
Diode Maximum Forward Current   
480  
±20  
VGE  
Continuous Gate-to-Emitter Voltage  
V
PD @ TC = 25°C  
PD @ TC = 100°C  
TJ  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
750  
375  
-40 to +175  
W
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
°C  
300 (0.063 in. (1.6mm) from case)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
–––  
0.24  
–––  
Max.  
0.20  
1.37  
–––  
40  
Units  
Thermal Resistance Junction-to-Case-(each IGBT)   
Thermal Resistance Junction-to-Case-(each Diode)   
Thermal Resistance, Case-to-Sink (flat, greased surface)  
Thermal Resistance, Junction-to-Ambient (typical socket mount)  
RJC (IGBT)  
RJC (Diode)  
RCS  
°C/W  
RJA  
1
www.irf.com  
© 2014 International Rectifier  
Submit Datasheet Feedback  
November 13, 2014  
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