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IRGPS40B120UPBF PDF预览

IRGPS40B120UPBF

更新时间: 2024-02-21 10:22:04
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管双极性晶体管
页数 文件大小 规格书
10页 116K
描述
INSULATED GATE BIPOLAR TRANSISTOR

IRGPS40B120UPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
风险等级:5.15外壳连接:COLLECTOR
最大集电极电流 (IC):80 A集电极-发射极最大电压:1200 V
配置:SINGLEJESD-30 代码:R-PSIP-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN OVER NICKEL
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:MOTOR CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):357 ns
标称接通时间 (ton):115 nsBase Number Matches:1

IRGPS40B120UPBF 数据手册

 浏览型号IRGPS40B120UPBF的Datasheet PDF文件第2页浏览型号IRGPS40B120UPBF的Datasheet PDF文件第3页浏览型号IRGPS40B120UPBF的Datasheet PDF文件第4页浏览型号IRGPS40B120UPBF的Datasheet PDF文件第5页浏览型号IRGPS40B120UPBF的Datasheet PDF文件第6页浏览型号IRGPS40B120UPBF的Datasheet PDF文件第7页 
PD-95899A  
IRGPS40B120UP  
UltraFast IGBT  
INSULATED GATE BIPOLAR TRANSISTOR  
C
VCES = 1200V  
Features  
• Non Punch Through IGBT Technology.  
• 10µs Short Circuit Capability.  
• Square RBSOA.  
VCE(on) typ. = 3.12V  
• Positive VCE (on) Temperature Coefficient.  
• Super-247 Package.  
• Lead-Free  
G
@ VGE = 15V,  
E
ICE = 40A, Tj=25°C  
n-channel  
Benefits  
• Benchmark Efficiency for Motor Control.  
• Rugged Transient Performance.  
• Low EMI.  
• Significantly Less Snubber Required  
• Excellent Current Sharing in Parallel Operation.  
Super-247™  
Absolute Maximum Ratings  
Parameter  
Max.  
1200  
80  
Units  
V
VCES  
C @ TC = 25°C  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current  
I
IC @ TC = 100°C  
40  
ICM  
160  
A
ILM  
Clamped Inductive Load Current   
Gate-to-Emitter Voltage  
160  
VGE  
± 20  
V
PD @ TC = 25°C  
Maximum Power Dissipation  
595  
W
PD @ TC = 100°C Maximum Power Dissipation  
238  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
°C  
300 (0.063 in. (1.6mm) from case)  
Thermal Resistance  
Parameter  
Junction-to-Case - IGBT  
Min.  
–––  
Typ.  
–––  
Max.  
0.20  
–––  
40  
Units  
°C/W  
RθJC  
RθCS  
RθJA  
Case-to-Sink, flat, greased surface  
Junction-to-Ambient, typical socket mount  
Recommended Clip Force  
–––  
0.24  
–––  
–––  
20 (2)  
–––  
–––  
–––  
–––  
–––  
N(kgf)  
g (oz)  
nH  
Wt  
Le  
Weight  
6.0 (0.21)  
13  
Internal Emitter Inductance (5mm from package)  
–––  
www.irf.com  
1
03/15/05  

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