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IRGPS46160DPBF PDF预览

IRGPS46160DPBF

更新时间： 2024-01-28 23:05:04
品牌 Logo 应用领域
英飞凌 - INFINEON 栅
页数 文件大小 规格书
11页 336K
描述
Insulated Gate Bipolar Transistor,

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IRGPS46160DPBF 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：,Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：16 weeks
风险等级：2.25峰值回流温度（摄氏度）：NOT SPECIFIED
处于峰值回流温度下的最长时间：NOT SPECIFIEDBase Number Matches：1

IRGPS46160DPBF 数据手册

 浏览型号IRGPS46160DPBF的Datasheet PDF文件第2页浏览型号IRGPS46160DPBF的Datasheet PDF文件第3页浏览型号IRGPS46160DPBF的Datasheet PDF文件第4页浏览型号IRGPS46160DPBF的Datasheet PDF文件第5页浏览型号IRGPS46160DPBF的Datasheet PDF文件第6页浏览型号IRGPS46160DPBF的Datasheet PDF文件第7页 
IRGPS46160DPbF  
INSULATEDGATEBIPOLARTRANSISTORWITH  
ULTRAFAST SOFT RECOVERY DIODE  
VCES = 600V  
C
C
IC = 160A, TC = 100°C  
E
C
tSC ≥ 5μs, TJ(max) = 175°C  
VCE(on) typ. = 1.70V @ IC = 120A  
G
G
E
Super-247  
n-channel  
Applications  
• Industrial Motor Drive  
• Inverters  
G
Gate  
C
E
Collector  
Emitter  
• UPS  
• Welding  
Features  
Benefits  
High efficiency in a wide range of applications and switching  
frequencies  
Low VCE(ON) and Switching Losses  
Improved reliability due to rugged hard switching performance  
and higher power capability  
Square RBSOA and Maximum Junction Temperature 175°C  
Positive VCE (ON) Temperature Coefficient  
Excellent current sharing in parallel operation  
5μs short circuit SOA  
Lead-Free, RoHS compliant  
Enables short circuit protection scheme  
Environmentally friendly  
Standard Pack  
Form  
Base part number  
Package Type  
Orderable part number  
Quantity  
IRGPS46160DPbF  
Super-247  
Tube  
25  
IRGPS46160DPbF  
Absolute Maximum Ratings  
Parameter  
Max.  
600  
Units  
V
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulse Collector Current, VGE = 15V  
VCES  
240  
IC @ TC = 25°C  
160  
360  
480  
240  
160  
IC @ TC = 100°C  
ICM  
Clamped Inductive Load Current, VGE = 20V  
A
ILM  
Diode Continous Forward Current  
Diode Continous Forward Current  
Diode Maximum Forward Current  
IF @ TC = 25°C  
IF @ TC = 100°C  
480  
±20  
IFM  
Continuous Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Maximum Power Dissipation  
Maximum Power Dissipation  
Operating Junction and  
V
VGE  
±30  
750  
PD @ TC = 25°C  
W
375  
PD @ TC = 100°C  
-55 to +175  
TJ  
Storage Temperature Range  
°C  
TSTG  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
–––  
0.24  
–––  
Max.  
0.20  
0.63  
–––  
40  
Units  
Junction-to-Case (IGBT)  
RθJC (IGBT)  
RθJC (Diode)  
RθCS  
Junction-to-Case (Diode)  
°C/W  
Case-to-Sink (flat, greased surface)  
Junction-to-Ambient (typical socket mount)  
RθJA  
1
www.irf.com © 2014 International Rectifier  
Submit Datasheet Feedback  
November 14, 2014  
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