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IRGPH40FD2

更新时间： 2024-09-14 22:07:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率控制双极性晶体管栅局域网软恢复二极管快速软恢复二极管
页数	文件大小	规格书
8页	388K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=17A)

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IRGPH40FD2 数据手册

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PD - 9.1117

IRGPH40FD2

INSULATED GATE BIPOLAR TRANSISTOR

WITH ULTRAFAST SOFT RECOVERY

Fast CoPack IGBT

DIODE

Features

V_CES= 1200V

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for medium operating frequency (1 to

10kHz) See Fig. 1 for Current vs. Frequency curve

_CE(sat)≤ 3.3V

@V_GE= 15V, I_C= 17A

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well

known IGBT line. They provide the convenience of an IGBT and an ultrafast

recovery diode in one package, resulting in substantial benefits to a host of

high-voltage, high-current, motor control, UPS and power supply applications.

O-247AC

Absolute Maximum Ratings

Parameter

Max.

1200

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_F@ T_C= 100°C

I_FM

8.0

130

V_GE

± 20

160

P_D@ T_C= 25°C

Maximum Power Dissipation

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Min.

—

Typ.

—

Max.

0.77

1.7

—

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

—

°C/W

—

0.24

—

6 (0.21)

—

g (oz)

Revision 1

C-285

To Order

12 3 4 5 6 7 8

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