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IRGPH50FD2

更新时间： 2024-11-05 22:07:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率控制栅局域网软恢复二极管快速软恢复二极管
页数	文件大小	规格书
8页	395K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=25A)

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PD - 9.1120

IRGPH50FD2

INSULATED GATE BIPOLAR TRANSISTOR

WITH ULTRAFAST SOFT RECOVERY

Fast CoPack IGBT

DIODE

Features

V_CES= 1200V

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for medium operating frequency (1 to

10kHz) See Fig. 1 for Current vs. Frequency curve

_CE(sat)≤ 2.9V

@V_GE= 15V, I_C= 25A

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well

known IGBT line. They provide the convenience of an IGBT and an ultrafast

recovery diode in one package, resulting in substantial benefits to a host of

high-voltage, high-current, motor control, UPS and power supply applications.

O-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

1200

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Gate-to-Emitter Voltage

I_F@ T_C= 100°C

I_FM

V_GE

± 20

P_D@ T_C= 25°C

Maximum Power Dissipation

200

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Min.

—

Typ.

—

Max.

0.64

0.83

—

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

—

°C/W

—

0.24

—

6 (0.21)

—

g (oz)

Revision 1

C-293

To Order

12 3 4 5 6 7 8

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