Datasheet > 晶体管 > IGBT> IRGPH40MD2

IRGPH40MD2

更新时间： 2024-11-04 22:32:51

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管电动机控制双极性晶体管栅局域网软恢复二极管快速软恢复二极管
页数	文件大小	规格书
2页	75K
描述
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=18A)

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Preliminary Data Sheet PD - 9.1118

IRGPH40MD2

Short Circuit Rated

Fast CoPack IGBT

INSULATED GATE BIPOLAR TRANSISTOR

WITH ULTRAFAST SOFT RECOVERY

DIODE

Features

V_CES= 1200V

• Short circuit rated -10µs @125°C, V _GE= 15V

• Switching-loss rating includes all "tail" losses

• HEXFRED^TMsoft ultrafast diodes

• Optimized for medium operating frequency ( 1 to

10kHz)

_CE(sat)≤ 3.4V

@V_GE= 15V, I_C= 18A

n-channel

Description

Co-packaged IGBTs are a natural extension of International Rectifier's well

known IGBT line. They provide the convenience of an IGBT and an ultrafast

recovery diode in one package, resulting in substantial benefits to a host of

high-voltage, high-current, applications.

These new short circuit rated devices are especially suited for motor control

and other applications requiring short circuit withstand capability.

TO-247AC

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

I_C@ T_C= 25°C

I_C@ T_C= 100°C

I_CM

Collector-to-Emitter Voltage

Continuous Collector Current

Pulsed Collector Current

1200

I_LM

Clamped Inductive Load Current

Diode Continuous Forward Current

Diode Maximum Forward Current

Short Circuit Withstand Time

Gate-to-Emitter Voltage

8.0

± 20

I_F@ T_C= 100°C

I_FM

t_sc

V_GE

µs

P_D@ T_C= 25°C

Maximum Power Dissipation

160

P_D@ T_C= 100°C Maximum Power Dissipation

T_J

Operating Junction and

-55 to +150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw.

°C

300 (0.063 in. (1.6mm) from case)

10 lbf•in (1.1 N•m)

Thermal Resistance

Parameter

Min.

—

Typ.

—

Max.

0.77

1.7

—

Units

R_θJC

R_θCS

R_θJA

Junction-to-Case - IGBT

Junction-to-Case - Diode

Case-to-Sink, flat, greased surface

Junction-to-Ambient, typical socket mount

Weight

—

°C/W

—

0.24

—

6 (0.21)

—

g (oz)

Revision 2

C-479

To Order

中文翻译

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与IRGPH40MD2相关器件

型号	品牌	获取价格	描述	数据表
IRGPH40S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=20A)
IRGPH50	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A)
IRGPH50F	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=25A)
IRGPH50FD1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, TO-247
IRGPH50FD2	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=25
IRGPH50K	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRGPH50KD2	INFINEON	获取价格	Fit Rate / Equivalent Device Hours
IRGPH50M	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=23A)
IRGPH50MD2	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=23
IRGPH50S	INFINEON	获取价格	INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=33A)

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