Datasheet > IRFS620A

IRFS620A

更新时间： 2024-11-15 23:58:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管脉冲局域网
页数	文件大小	规格书
7页	261K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 4.1A I(D) \| TO-220AB

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IRFS620A 数据手册

IRFS620A

Advanced Power MOSFET

FEATURES

BV_DSS= 200 V

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

R_DS(on)= 0.8

I_D= 4.1 A

Improved Gate Charge

Extended Safe Operating Area

TO-220F

Lower Leakage Current : 10 A (Max.) @ V_DS= 200V

Low R_DS(ON): 0.626 (Typ.)

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

Characteristic

Value

Units

V_DSS

Drain-to-Source Voltage

Continuous Drain Current (T_C=25 ^oC)

Continuous Drain Current (T_C=100 ^o

200

4.1

2.6

I_D

)

I_DM

V_GS

E_AS

I_AR

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

4.1

3.2

5.0

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T_C=25^o

V/ns

)

P_D

T_J, T_STG

T_L

Linear Derating Factor

0.25

W/^oC

Operating Junction and

Storage Temperature Range

- 55 to +150

300

Maximum Lead Temp. for Soldering

Purposes, 1/8 “ from case for 5-seconds

^oC

Thermal Resistance

Symbol

R_q_JC

Characteristic

Typ.

Max.

Units

3.95

62.5

Junction-to-Case

^oC/W

R_q_JA

Junction-to-Ambient

Rev. B

12 3 4 5 6 7

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与IRFS620A相关器件

型号	品牌	获取价格	描述	数据表
IRFS620B	FAIRCHILD	获取价格	200V N-Channel MOSFET
IRFS621	SAMSUNG	获取价格	Power Field-Effect Transistor, 4.1A I(D), 150V, 0.8ohm, 1-Element, N-Channel, Silicon, Met
IRFS622	SAMSUNG	获取价格	Power Field-Effect Transistor, 4A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal
IRFS624	SAMSUNG	获取价格	Power Field-Effect Transistor, 3.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Met
IRFS624A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 3.4A I(D) \| TO-220AB
IRFS624B	FAIRCHILD	获取价格	250V N-Channel MOSFET
IRFS625	SAMSUNG	获取价格	Power Field-Effect Transistor, 2.9A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Met
IRFS630	SAMSUNG	获取价格	Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRFS630A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFS630B	FAIRCHILD	获取价格	200V N-Channel MOSFET