Datasheet > IRFS620B

IRFS620B

更新时间： 2024-11-15 22:51:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
10页	876K
描述
200V N-Channel MOSFET

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IRFS620B 数据手册

November 2001

IRF620B/IRFS620B

200V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters,

switch mode power supplies, DC-AC converters for

uninterrupted power supply and motor control.

•

5.0A, 200V, R

= 0.8Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 12 nC)

Low Crss ( typical 10 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

TO-220

IRF Series

TO-220F

IRFS Series

D S

G D

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

IRF620B

IRFS620B

Units

Drain-Source Voltage

200

DSS

- Continuous (T = 25°C)

Drain Current

5.0

3.2

5.0 *

3.2 *

18 *

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 30

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

5.0

4.7

5.5

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.38

0.25

W/°C

°C

T , T

-55 to +150

300

STG

Maximum lead temperature for soldering purposes,

°C

1/8" from case for 5 seconds

* Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

Parameter

IRF620B

IRFS620B

3.95

Units

°C/W

Thermal Resistance, Junction-to-Case Max.

Thermal Resistance, Case-to-Sink Typ.

2.65

0.5

θJC

θCS

Thermal Resistance, Junction-to-Ambient Max.

62.5

θJA

Rev. A, November 2001

12 3 4 5 6 7...10

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