生命周期: | Obsolete | 零件包装代码: | TO-220F |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | Is Samacsys: | N |
雪崩能效等级(Eas): | 83 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 250 V |
最大漏极电流 (Abs) (ID): | 2.9 A | 最大漏极电流 (ID): | 2.9 A |
最大漏源导通电阻: | 1.5 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
功耗环境最大值: | 30 W | 最大功率耗散 (Abs): | 30 W |
最大脉冲漏极电流 (IDM): | 13 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 52 ns | 最大开启时间(吨): | 53 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFS630 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met | |
IRFS630A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRFS630B | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
IRFS631 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 5.9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Met | |
IRFS632 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal | |
IRFS634 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me | |
IRFS634A | SAMSUNG |
获取价格 |
Advanced Power MOSEFT | |
IRFS634B | KERSEMI |
获取价格 |
250V N-Channel MOSFET | |
IRFS634B | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
IRFS635 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Me |