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IRFS650B_FP001 PDF预览

IRFS650B_FP001

更新时间: 2024-11-16 21:16:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 649K
描述
Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN

IRFS650B_FP001 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.59
雪崩能效等级(Eas):600 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):15.8 A最大漏极电流 (ID):28 A
最大漏源导通电阻:0.085 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):112 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFS650B_FP001 数据手册

 浏览型号IRFS650B_FP001的Datasheet PDF文件第2页浏览型号IRFS650B_FP001的Datasheet PDF文件第3页浏览型号IRFS650B_FP001的Datasheet PDF文件第4页浏览型号IRFS650B_FP001的Datasheet PDF文件第5页浏览型号IRFS650B_FP001的Datasheet PDF文件第6页浏览型号IRFS650B_FP001的Datasheet PDF文件第7页 
November 2001  
IRFS650B  
200V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switching DC/DC converters,  
switch mode power supplies, DC-AC converters for  
uninterrupted power supply and motor control.  
15.8A, 200V, R  
= 0.085@V = 10 V  
DS(on) GS  
Low gate charge ( typical 95 nC)  
Low Crss ( typical 75 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
G!  
TO-220F  
IRFS Series  
!
S
G D  
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
IRFS650B  
200  
Units  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
15.8  
10  
A
D
C
- Continuous (T = 100°C)  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
63  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
600  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
15.8  
5.0  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
W
AR  
dv/dt  
5.0  
P
Power Dissipation (T = 25°C)  
50  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.4  
W/°C  
°C  
T , T  
-55 to +150  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
Units  
°C/W  
°C/W  
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient  
2.51  
62.5  
θJC  
θJA  
--  
©2001 Fairchild Semiconductor Corporation  
Rev. B, November 2001  

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