Datasheet > IRFS7430-7PPBF

IRFS7430-7PPBF

更新时间： 2024-02-10 04:18:34

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
11页	541K
描述
Power Field-Effect Transistor

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技术参数
数据手册

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IRFS7430-7PPBF 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.24	Base Number Matches：	1

IRFS7430-7PPBF 数据手册

StrongIRFET™

IRFS7430-7PPbF

Application

HEXFET^®Power MOSFET

 Brushed Motor drive applications

 BLDC Motor drive applications

PWM Inverterized topologies

Battery powered circuits

 Half-bridge and full-bridge topologies

 Electronic ballast applications

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

 DC/DC and AC/DC converters

V_DSS

40V

R_{DS(on) typ.}

0.55m

0.75m

522A

max

I_{D (Silicon Limited)}

I_{D (Package Limited)}

240A

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free, RoHS Compliant

Gate

Drain

Source

Standard Pack

Orderable Part Number

Base part number Package Type

Form

Quantity

Tube

IRFS7430-7PPbF

IRFS7430TRL7PP

IRFS7430-7PPbF

D²Pak-7Pin

Tape and Reel Left

800

4.0

600

500

400

300

200

100

= 100A

Limited By Package

3.0

2.0

1.0

0.0

= 125°C

= 25°C

10 12 14 16 18 20

100

125

150

175

, Case Temperature (°C)

Gate -to -Source Voltage (V)

GS,

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

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November 19, 2013

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