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IRFS7434-7P PDF预览

IRFS7434-7P

更新时间: 2023-09-03 20:38:27
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 544K
描述
40V 单个 N 通道 HEXFET Power MOSFET, 采用 7引脚 D2-Pak 封装

IRFS7434-7P 数据手册

 浏览型号IRFS7434-7P的Datasheet PDF文件第2页浏览型号IRFS7434-7P的Datasheet PDF文件第3页浏览型号IRFS7434-7P的Datasheet PDF文件第4页浏览型号IRFS7434-7P的Datasheet PDF文件第5页浏览型号IRFS7434-7P的Datasheet PDF文件第6页浏览型号IRFS7434-7P的Datasheet PDF文件第7页 
StrongIRFET™  
IRFS7434-7PPbF  
Application  
HEXFET® Power MOSFET  
Brushed Motor drive applications  
BLDC Motor drive applications  
Battery powered circuits  
VDSS  
40V  
Half-bridge and full-bridge topologies  
Synchronous rectifier applications  
Resonant mode power supplies  
OR-ing and redundant power switches  
DC/DC and AC/DC converters  
DC/AC Inverters  
RDS(on) typ.  
0.70m  
1.0m  
362A  
max  
ID (Silicon Limited)  
ID (Package Limited)  
240A  
Benefits  
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  
Fully Characterized Capacitance and Avalanche SOA  
Enhanced body diode dV/dt and dI/dt Capability  
Lead-Free, RoHS Compliant  
G
D
S
Gate  
Drain  
Source  
Standard Pack  
Form  
Tube  
Base part number  
Package Type  
Orderable Part Number  
Quantity  
50  
IRFS7434-7PPbF  
IRFS7434TRL7PP  
IRFS7434-7PPbF  
D2Pak-7Pin  
Tape and Reel Left  
800  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
400  
350  
300  
250  
200  
150  
100  
50  
Limited By Package  
I
= 100A  
D
T
T
= 125°C  
= 25°C  
J
J
0
4
6
8
10 12 14 16 18 20  
25  
50  
75  
100  
125  
150  
T
, Case Temperature (°C)  
C
V
Gate -to -Source Voltage (V)  
GS,  
Fig 2. Maximum Drain Current vs. Case Temperature  
Fig 1. Typical On-Resistance vs. Gate Voltage  
1
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© 2014 International Rectifier  
Submit Datasheet Feedback  
November 19, 2014  

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