Datasheet > IRFS7530-7P

IRFS7530-7P

更新时间： 2023-09-03 20:34:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	571K
描述
60V 单个 N 通道 HEXFET Power MOSFET, 采用 7引脚 D2-Pak 封装

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数据手册

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IRFS7530-7P 数据手册

StrongIRFET™

IRFS7530-7PPbF

HEXFET^®Power MOSFET

Application

 Brushed Motor drive applications

 BLDC Motor drive applications

 Battery powered circuits

 Half-bridge and full-bridge topologies

 Synchronous rectifier applications

 Resonant mode power supplies

 OR-ing and redundant power switches

V_DSS

R_DS(on)typ.

max

60V

1.15m

1.4m

338A

I_{D (Silicon Limited)}

I_{D (Package Limited)}

240A

Benefits

 Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

 Fully Characterized Capacitance and Avalanche SOA

 Enhanced body diode dV/dt and dI/dt Capability

 Lead-Free, RoHS Compliant

Gate

Drain

Source

Base Part Number

Package Type

Standard Pack

Complete Part Number

Form

Tube

Quantity

IRFS7530-7PPbF

IRFS7530TRL7PP

IRFS7530-7PPbF

D²Pak-7PIN

Tape and Reel Left

800

350

300

250

200

150

100

= 100A

Limited By Package

T = 125°C

T = 25°C

100

125

150

175

, Gate-to-Source Voltage (V)

, Case Temperature (°C)

Fig 2. Maximum Drain Current vs. Case Temperature

Fig 1. Typical On-Resistance vs. Gate Voltage

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