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IRFS7530 PDF预览

IRFS7530

更新时间: 2024-01-28 07:41:53
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
14页 661K
描述
60V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

IRFS7530 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, PLASTIC, D2PAK-3/2Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.14雪崩能效等级(Eas):1025 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):195 A
最大漏极电流 (ID):195 A最大漏源导通电阻:0.002 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):375 W最大脉冲漏极电流 (IDM):760 A
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFS7530 数据手册

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StrongIRFET™  
IRFB7530PbF  
IRFS7530PbF  
IRFSL7530PbF  
HEXFET® Power MOSFET  
Application  
Brushed Motor drive applications  
BLDC Motor drive applications  
Battery powered circuits  
Half-bridge and full-bridge topologies  
Synchronous rectifier applications  
Resonant mode power supplies  
OR-ing and redundant power switches  
DC/DC and AC/DC converters  
DC/AC Inverters  
VDSS  
60V  
RDS(on) typ.  
max  
1.65m  
2.00m  
295A  
ID (Silicon Limited)  
ID (Package Limited)  
195A  
D
D
S
Benefits  
S
S
D
G
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  
Fully Characterized Capacitance and Avalanche SOA  
Enhanced body diode dV/dt and dI/dt Capability  
Lead-Free, RoHS Compliant  
D
G
G
G
D
S
Gate  
Drain  
Source  
Base part number  
Package Type  
Standard Pack  
Form  
Orderable Part Number  
Quantity  
50  
IRFB7530PbF  
IRFSL7530PbF  
TO-220  
TO-262  
Tube  
IRFB7530PbF  
IRFSL7530PbF  
IRFS7530PbF  
Tube  
50  
Tube  
50  
IRFS7530PbF  
D2-Pak  
Tape and Reel Left  
800  
IRFS7530TRLPbF  
300  
250  
200  
150  
100  
50  
7
6
5
4
3
2
1
I
= 100A  
D
Limited by package  
T
= 125°C  
= 25°C  
J
T
J
0
2
4
6
8
10 12 14 16 18 20  
25  
50  
75  
100  
125  
150  
175  
T
, Case Temperature (°C)  
C
V
Gate -to -Source Voltage (V)  
GS,  
Fig 2. Maximum Drain Current vs. Case Temperature  
Fig 1. Typical On-Resistance vs. Gate Voltage  
1
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November 7, 2014  

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