生命周期: | Obsolete | 零件包装代码: | TO-220F |
包装说明: | TO-220F, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.71 | 雪崩能效等级(Eas): | 210 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (Abs) (ID): | 5.8 A |
最大漏极电流 (ID): | 5.8 A | 最大漏源导通电阻: | 0.45 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 38 W | 最大脉冲漏极电流 (IDM): | 23 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFS634B | KERSEMI |
获取价格 |
250V N-Channel MOSFET | |
IRFS634B | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
IRFS635 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Me | |
IRFS640 | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
IRFS640 | SAMSUNG |
获取价格 |
Improved inductive ruggedness | |
IRFS640A | SAMSUNG |
获取价格 |
Improved gate charge | |
IRFS640A | FAIRCHILD |
获取价格 |
Rugged Gate Oxide Technology | |
IRFS640B | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
IRFS640B | TGS |
获取价格 |
200V N-Channel MOSFET | |
IRFS640B | ROCHESTER |
获取价格 |
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F, 3 PIN |