生命周期: | Obsolete | 零件包装代码: | TO-220F |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | ISOLATED |
配置: | SINGLE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 8 A | 最大漏源导通电阻: | 0.6 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFS634 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me | |
IRFS634A | SAMSUNG |
获取价格 |
Advanced Power MOSEFT | |
IRFS634B | KERSEMI |
获取价格 |
250V N-Channel MOSFET | |
IRFS634B | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET | |
IRFS635 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 4.4A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Me | |
IRFS640 | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
IRFS640 | SAMSUNG |
获取价格 |
Improved inductive ruggedness | |
IRFS640A | SAMSUNG |
获取价格 |
Improved gate charge | |
IRFS640A | FAIRCHILD |
获取价格 |
Rugged Gate Oxide Technology | |
IRFS640B | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET |