是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220F | 包装说明: | TO-220F, 3 PIN |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 75 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 250 V | 最大漏极电流 (Abs) (ID): | 3.4 A |
最大漏极电流 (ID): | 4.1 A | 最大漏源导通电阻: | 1.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 34 W |
最大脉冲漏极电流 (IDM): | 16.4 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFS625 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 2.9A I(D), 250V, 1.5ohm, 1-Element, N-Channel, Silicon, Met | |
IRFS630 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Met | |
IRFS630A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET | |
IRFS630B | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET | |
IRFS631 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 5.9A I(D), 150V, 0.4ohm, 1-Element, N-Channel, Silicon, Met | |
IRFS632 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal | |
IRFS634 | SAMSUNG |
获取价格 |
Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Me | |
IRFS634A | SAMSUNG |
获取价格 |
Advanced Power MOSEFT | |
IRFS634B | KERSEMI |
获取价格 |
250V N-Channel MOSFET | |
IRFS634B | FAIRCHILD |
获取价格 |
250V N-Channel MOSFET |