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IRFS624B PDF预览

IRFS624B

更新时间: 2024-11-15 22:51:39
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 875K
描述
250V N-Channel MOSFET

IRFS624B 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TO-220F包装说明:TO-220F, 3 PIN
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N雪崩能效等级(Eas):75 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):3.4 A
最大漏极电流 (ID):4.1 A最大漏源导通电阻:1.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):34 W
最大脉冲漏极电流 (IDM):16.4 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFS624B 数据手册

 浏览型号IRFS624B的Datasheet PDF文件第2页浏览型号IRFS624B的Datasheet PDF文件第3页浏览型号IRFS624B的Datasheet PDF文件第4页浏览型号IRFS624B的Datasheet PDF文件第5页浏览型号IRFS624B的Datasheet PDF文件第6页浏览型号IRFS624B的Datasheet PDF文件第7页 
November 2001  
IRF624B/IRFS624B  
250V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switching DC/DC converters and  
switch mode power supplies.  
4.1A, 250V, R  
= 1.1@V = 10 V  
DS(on) GS  
Low gate charge ( typical 13.5 nC)  
Low Crss ( typical 9.5 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
G
TO-220  
IRF Series  
TO-220F  
IRFS Series  
G
D S  
G D  
S
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
IRF624B  
IRFS624B  
Units  
V
V
I
Drain-Source Voltage  
250  
DSS  
- Continuous (T = 25°C)  
Drain Current  
4.1  
2.6  
4.1 *  
2.6 *  
A
D
C
- Continuous (T = 100°C)  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
16.4  
16.4 *  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
75  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
4.1  
4.9  
5.5  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
mJ  
V/ns  
W
AR  
dv/dt  
P
Power Dissipation (T = 25°C)  
49  
34  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.39  
0.27  
W/°C  
°C  
T , T  
-55 to +150  
300  
J
STG  
Maximum lead temperature for soldering purposes,  
T
°C  
L
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Characteristics  
Symbol  
Parameter  
IRF624B  
IRFS624B  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case Max.  
Thermal Resistance, Case-to-Sink Typ.  
2.54  
0.5  
3.7  
--  
θJC  
θCS  
Thermal Resistance, Junction-to-Ambient Max.  
62.5  
62.5  
θJA  
©2001 Fairchild Semiconductor Corporation  
Rev. A, November 2001  

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