Datasheet > IRFR5410TRR

IRFR5410TRR

更新时间： 2024-11-27 12:33:43

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
10页	3880K
描述
AUTOMOTIVE GRADE

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中文翻译

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数据手册

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IRFR5410TRR 数据手册

PD - 96344

AUTOMOTIVE GRADE

AUIRFR5410

HEXFET^®Power MOSFET

Features

●

AdvancedPlanarTechnology

●

P-ChannelMOSFET

LowOn-Resistance

Dynamic dV/dT Rating

175°COperatingTemperature

Fast Switching

Fully Avalanche Rated

Repetitive Avalanche Allowed up to

Tjmax

V_(BR)DSS

-100V

0.205

R_DS(on)max.

I_D



-13A

●

Lead-Free,RoHSCompliant

Automotive Qualified *

Description

SpecificallydesignedforAutomotiveapplications,

this Cellular Planar design of HEXFET® Power

MOSFETsutilizesthelatestprocessingtechniques

toachievelowon-resistancepersiliconarea. This

benefitcombinedwiththefastswitchingspeedand

ruggedized device design that HEXFET power

MOSFETsarewellknownfor,providesthedesigner

with an extremely efficient and reliable device for

use in Automotive and a wide variety of other

applications.

D-Pak

AUIRFR5410

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in

the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Max.

-13

Parameter

Units

Continuous Drain Current, V_GS@ 10V

@ T = 25°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

-8.2

-52

@ T = 100°C

@T = 25°C Power Dissipation

W/°C

0.53

± 20

Linear Derating Factor

Gate-to-Source Voltage

E_AS

I_AR

194

Single Pulse Avalanche Energy (Thermally Limited)

-8.4

6.3

Avalanche Current

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

-5.0

V/ns

-55 to + 150

Storage Temperature Range

°C

STG

300

Soldering Temperature, for 10 seconds (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

1.9

Units

R_JC

R_JA

Junction-to-Case

–––

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

www.kersemi.com

12/06/10

12 3 4 5 6 7...10

中文翻译

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与IRFR5410TRR相关器件

型号	品牌	获取价格	描述	数据表
IRFR5410TRRPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRFR5505	INFINEON	获取价格	Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)
IRFR5505GPBF	INFINEON	获取价格	Ultra Low On-Resistance
IRFR5505GTRLPBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Meta
IRFR5505GTRPBF	INFINEON	获取价格	ultra low on-resistance
IRFR5505GTRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Meta
IRFR5505PBF	INFINEON	获取价格	Ultra Low On-Resistance
IRFR5505PBF	KERSEMI	获取价格	ULTRA LOW ON-RESISTANCE
IRFR5505TR	INFINEON	获取价格	Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Meta
IRFR5505TR	UMW	获取价格	种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C

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