IRFR5505TRR

更新时间： 2024-11-18 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
10页	109K
描述
Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3

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IRFR5505TRR 数据手册

PD - 9.1610B

IRFR/U5505

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel

l Surface Mount (IRFR5505)

l Straight Lead (IRFU5505)

l Advanced Process Technology

l Fast Switching

V_DSS= -55V

R_DS(on)= 0.11Ω

I_D= -18A

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

I-Pa k

D -Pa k

T O -2 52 A A

TO -2 5 1 AA

The D-Pak is designed for surface mounting using vapor

phase, infrared, orwavesolderingtechniques. Thestraight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-18

-11

-64

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.45

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy

Avalanche Current

150

-9.6

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.7

V/ns

-5.0

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

–––

Max.

2.2

Units

R_θJC

R_θJA

Junction-to-Ambient (PCB mount)**

Junction-to-Ambient

°C/W

110

8/25/97

12 3 4 5 6 7...10

中文翻译

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