是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 0.67 |
Is Samacsys: | N | 其他特性: | AVALANCHE RATED |
雪崩能效等级(Eas): | 310 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (Abs) (ID): | 13 A | 最大漏极电流 (ID): | 13 A |
最大漏源导通电阻: | 0.295 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252AA | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 110 W |
最大脉冲漏极电流 (IDM): | 44 A | 认证状态: | Not Qualified |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) - with Nickel (Ni) barrier | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRFR6215TRPBF | INFINEON |
完全替代 |
175°C Operating Temperature | |
IRFR6215PBF | INFINEON |
完全替代 |
HEXFET㈢ Power MOSFET | |
IRFR6215TRRPBF | INFINEON |
类似代替 |
Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Me |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFR6215TRPBF | INFINEON |
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175°C Operating Temperature | |
IRFR6215TRR | KERSEMI |
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AUTOMOTIVE GRADE | |
IRFR6215TRRPBF | INFINEON |
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Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Me | |
IRFR7440 | INFINEON |
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Brushed Motor drive applications | |
IRFR7440TR | UMW |
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种类:N-Channel;漏源电压(Vdss):40V;持续漏极电流(Id)(在25°C时 | |
IRFR7440TRPBF | INFINEON |
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Brushed Motor drive applications | |
IRFR7446 | INFINEON |
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The?StrongIRFET? power MOSFET?family is optimized for low RDS(on)?and high current capabil | |
IRFR7446PBF | INFINEON |
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Power Field-Effect Transistor, 56A I(D), 40V, 0.0039ohm, 1-Element, N-Channel, Silicon, Me | |
IRFR7446TRPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 56A I(D), 40V, 0.0039ohm, 1-Element, N-Channel, Silicon, Me |