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IRFR6215TRLPBF PDF预览

IRFR6215TRLPBF

更新时间: 2024-11-18 12:56:31
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
11页 243K
描述
175°C Operating Temperature

IRFR6215TRLPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:0.67
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):310 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (Abs) (ID):13 A最大漏极电流 (ID):13 A
最大漏源导通电阻:0.295 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):110 W
最大脉冲漏极电流 (IDM):44 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFR6215TRLPBF 数据手册

 浏览型号IRFR6215TRLPBF的Datasheet PDF文件第2页浏览型号IRFR6215TRLPBF的Datasheet PDF文件第3页浏览型号IRFR6215TRLPBF的Datasheet PDF文件第4页浏览型号IRFR6215TRLPBF的Datasheet PDF文件第5页浏览型号IRFR6215TRLPBF的Datasheet PDF文件第6页浏览型号IRFR6215TRLPBF的Datasheet PDF文件第7页 
PD-95080A  
IRFR6215PbF  
IRFU6215PbF  
HEXFET® Power MOSFET  
l P-Channel  
l 175°C Operating Temperature  
l Surface Mount (IRFR6215)  
l Straight Lead (IRFU6215)  
l Advanced Process Technology  
l Fast Switching  
l Fully Avalanche Rated  
l Lead-Free  
D
VDSS = -150V  
RDS(on) = 0.295Ω  
G
ID = -13A  
S
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve the  
lowest possible on-resistance per silicon area. This  
benefit, combined with the fast switching speed and  
ruggedized device design that HEXFET Power  
MOSFETs are well known for, provides the designer  
with an extremely efficient device for use in a wide  
variety of applications.  
D-PAK  
TO-252AA  
I-PAK  
TO-251AA  
The D-PAK is designed for surface mounting using  
vapor phase, infrared, or wave soldering techniques.  
The straight lead version (IRFU series) is for through-  
hole mounting applications. Power dissipation levels  
up to 1.5 watts are possible in typical surface mount  
applications.  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current †  
-13  
-9.0  
-44  
A
PD @TC = 25°C  
Power Dissipation  
110  
0.71  
± 20  
310  
-6.6  
11  
W
W/°C  
V
Linear Derating Factor  
VGS  
EAS  
IAR  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy‚†  
Avalanche Current†  
mJ  
A
EAR  
dv/dt  
TJ  
Repetitive Avalanche Energy†  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
mJ  
V/ns  
5.0  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
–––  
–––  
–––  
Max.  
1.4  
Units  
RθJC  
RθJA  
Junction-to-Ambient (PCB mount) **  
Junction-to-Ambient  
50  
°C/W  
RθJA  
110  
www.irf.com  
1
12/14/04  

IRFR6215TRLPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFR6215TRPBF INFINEON

完全替代

175°C Operating Temperature
IRFR6215PBF INFINEON

完全替代

HEXFET㈢ Power MOSFET
IRFR6215TRRPBF INFINEON

类似代替

Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Me

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