Datasheet > IRFR8314

IRFR8314

更新时间： 2024-10-03 11:12:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
10页	549K
描述
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

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IRFR8314 数据手册

IRFR8314PbF

HEXFET^®Power MOSFET

Application

V_DSS

Optimized for UPS/Inverter Applications

Low Voltage Power Tools

R_DS(on)max

(@ V_GS= 10V)

2.2

m

(@ V_GS= 4.5V)

Qg _(typical)

3.1

Benefits

I_{D (Silicon Limited)}

I_{D (Package Limited)}

179

90A

Fully Characterized Avalanche Voltage and Current

Lead-Free, RoHS Compliant

D-Pak

Gate

Drain

Source

Standard Pack

Base part number Package Type

IRFR8314PbF D-Pak

Orderable Part Number

Form

Quantity

Tape and Reel

2000

IRFR8314TRPbF

Absolute Maximum Rating

Symbol

Parameter

Max.

Units

V_DS

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

V_GS

± 20

179

127

I_D@ T_C= 25°C

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Package Limited)

Pulsed Drain Current 

357

125

P_D@T_C= 25°C

Maximum Power Dissipation

W/°C

P_D@T_C= 100°C Maximum Power Dissipation

Linear Derating Factor

0.83

T_J

Operating Junction and

-55 to + 175

300

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Thermal Resistance

Symbol

Parameter

Typ.

Max.

1.2

Units

Junction-to-Case 

R_JC

R_JA

–––

Junction-to-Ambient (PCB Mount) 

Junction-to-Ambient 

°C/W

110

Notes through are on page 9

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