Datasheet > IRFR6215TRR

IRFR6215TRR

更新时间： 2024-11-18 12:46:27

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
10页	4616K
描述
AUTOMOTIVE GRADE

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中文翻译

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数据手册

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IRFR6215TRR 数据手册

PD-96302

AUTOMOTIVE GRADE

AUIRFR6215

HEXFET^®Power MOSFET

Features

P-Channel

Low On-Resistance

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

V_(BR)DSS

-150V

0.295

-13A

R_DS(on)max.

I_D

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

Description

Specifically designed for Automotive applications of

HEXFET® Power MOSFETs utilizes the latest processing

techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and

ruggedized device design that HEXFET power MOSFETs

are well known for, provides the designer with an extremely

efficient and reliable device for use in Automotive and a

wide variety of other applications.

D-Pak

AUIRFR6215

Gate

Drain

Source

Absolute Maximum Ratings

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are

stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the

specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.

Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Max.

-13

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V

-9.0

I_DM

-44

Pulsed Drain Current

P_D@T_C= 25°C

110

Maximum Power Dissipation

Linear Derating Factor

W/°C

0.71

V_GS

E_AS

I_AR

± 20

310

Gate-to-Source Voltage

Single Pulse Avalanche Energy (Thermally limited)

Avalanche Current

-6.6

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery

V/ns

5.0

-55 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.4

Units

R_θJC

R_θJA

–––

Junction-to-Ambient(PCB mount)

Junction-to-Ambient

°C/W

110

www.kersemi.com

12 3 4 5 6 7...10

中文翻译

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与IRFR6215TRR相关器件

型号	品牌	获取价格	描述	数据表
IRFR6215TRRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Me
IRFR7440	INFINEON	获取价格	40V 单个 N 通道 HEXFET Power MOSFET, 采用无铅 D-Pak
IRFR7440PBF	INFINEON	获取价格	Brushed Motor drive applications
IRFR7440TR	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°C时
IRFR7440TRPBF	INFINEON	获取价格	Brushed Motor drive applications
IRFR7446	INFINEON	获取价格	The?StrongIRFET? power MOSFET?family is optimized for low RDS(on)?and high current capabil
IRFR7446PBF	INFINEON	获取价格	Power Field-Effect Transistor, 56A I(D), 40V, 0.0039ohm, 1-Element, N-Channel, Silicon, Me
IRFR7446TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 56A I(D), 40V, 0.0039ohm, 1-Element, N-Channel, Silicon, Me
IRFR7540	INFINEON	获取价格	The StrongIRFET™ power MOSFET family is optim
IRFR7540PBF	INFINEON	获取价格	Brushed Motor drive applications

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