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IRFR6215TRR PDF预览

IRFR6215TRR

更新时间: 2024-02-11 02:28:37
品牌 Logo 应用领域
科盛美 - KERSEMI /
页数 文件大小 规格书
10页 4616K
描述
AUTOMOTIVE GRADE

IRFR6215TRR 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-252AA
包装说明:LEAD FREE, PLASTIC, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.09其他特性:AVALANCHE RATED
雪崩能效等级(Eas):310 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (Abs) (ID):13 A最大漏极电流 (ID):13 A
最大漏源导通电阻:0.295 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):110 W
最大脉冲漏极电流 (IDM):44 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn) - with Nickel (Ni) barrier端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFR6215TRR 数据手册

 浏览型号IRFR6215TRR的Datasheet PDF文件第2页浏览型号IRFR6215TRR的Datasheet PDF文件第3页浏览型号IRFR6215TRR的Datasheet PDF文件第4页浏览型号IRFR6215TRR的Datasheet PDF文件第5页浏览型号IRFR6215TRR的Datasheet PDF文件第6页浏览型号IRFR6215TRR的Datasheet PDF文件第7页 
PD-96302  
AUTOMOTIVE GRADE  
AUIRFR6215  
HEXFET® Power MOSFET  
Features  
O
O
O
O
O
O
O
O
O
P-Channel  
Low On-Resistance  
Dynamic dV/dT Rating  
175°C Operating Temperature  
Fast Switching  
D
V(BR)DSS  
-150V  
0.295  
-13A  
RDS(on) max.  
ID  
G
Fully Avalanche Rated  
S
Repetitive Avalanche Allowed up to Tjmax  
Lead-Free, RoHS Compliant  
Automotive Qualified *  
D
Description  
Specifically designed for Automotive applications of  
HEXFET® Power MOSFETs utilizes the latest processing  
techniques to achieve low on-resistance per silicon area.  
This benefit combined with the fast switching speed and  
ruggedized device design that HEXFET power MOSFETs  
are well known for, provides the designer with an extremely  
efficient and reliable device for use in Automotive and a  
wide variety of other applications.  
S
D
G
D-Pak  
AUIRFR6215  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are  
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the  
specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device  
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.  
Ambient temperature (TA) is 25°C, unless otherwise specified.  
Parameter  
Continuous Drain Current, VGS @ 10V  
Max.  
-13  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V  
-9.0  
A
IDM  
-44  
Pulsed Drain Current  
PD @TC = 25°C  
110  
Maximum Power Dissipation  
Linear Derating Factor  
W
W/°C  
V
0.71  
VGS  
EAS  
IAR  
± 20  
310  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy (Thermally limited)  
Avalanche Current  
mJ  
A
-6.6  
EAR  
dv/dt  
TJ  
11  
Repetitive Avalanche Energy  
Peak Diode Recovery  
mJ  
V/ns  
5.0  
-55 to + 175  
Operating Junction and  
TSTG  
°C  
Storage Temperature Range  
Soldering Temperature, for 10 seconds (1.6mm from case)  
300  
Thermal Resistance  
Parameter  
Junction-to-Case  
Typ.  
Max.  
1.4  
Units  
RθJC  
RθJA  
RθJA  
–––  
–––  
–––  
Junction-to-Ambient(PCB mount)  
Junction-to-Ambient  
50  
°C/W  
110  
1
www.kersemi.com  

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