Datasheet > IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

更新时间： 2024-10-03 14:50:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
13页	1530K
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Power MOSFET

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IRFR9010, IRFU9010, SiHFR9010, SiHFU9010

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt rating

DPAK

(TO-252)

IPAK

(TO-251)

• Repetitive avalanche ratings

• Surface-mount (IRFR9010, SiHFR9010)

• Straight lead (IRFU9010, SiHFU9010)

• Simple drive requirements

Available

• Ease of paralleling

• Material categorization: for definitions of

compliance please see www.vishay.com/doc?99912

DESCRIPTION

P-Channel MOSFET

The power MOSFET technology is the key to Vishay’s

advanced line of power MOSFET transistors. The efficient

geometry and unique processing of this latest “State of the

PRODUCT SUMMARY

V_DS(V)

Art” design achieves: very low on-state resistance

-50

combined with high transconductance; superior reverse

energy and diode recovery dV/dt capability.

R_DS(on)(Ω)

V_GS= -10 V

0.50

The power MOSFET transistors also feature all of the well

established advantages of MOSFETs such as voltage

control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

Q_g(Max.) (nC)

9.1

3.0

5.9

Q_gs(nC)

_gd(nC)

Surface mount packages enhance circuit performance by

reducing stray inductances and capacitance. The DPAK

(TO-252) surface-mount package brings the advantages of

power MOSFETs to high volume applications where PC

Board surface mounting is desirable. The surface mount

option IRFR9010, SiHFR9010 is provided on 16 mm tape.

The straight lead option IRFU9010, SiHFU9010 of the device

is called the IPAK (TO-251).

Configuration

Single

They are well suited for applications where limited heat

dissipation is required such as, computers and peripherals,

telecommunication equipment, DC/DC converters, and a

wide range of consumer products.

ORDERING INFORMATION

Package

DPAK (TO-252)

SiHFR9010-GE3

IRFR9010PbF

DPAK (TO-252)

SiHFR9010TR-GE3 ^a

IRFR9010TRPbF ^a

DPAK (TO-252)

SiHFR9010TRL-GE3 ^a

IRFR9010TRLPbF ^a

IPAK (TO-251)

SiHFU9010-GE3

IRFU9010PbF

Lead (Pb)-free and halogen-free

Lead (Pb)-free

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-50

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

T_C= 25 °C

_C= 100 °C

-5.3

Continuous drain current

V_GSat -10 V

I_D

-3.3

Pulsed drain current ^a

I_DM

-21

Linear derating factor

Single pulse avalanche energy ^b

0.20

136

W/°C

E_AS

I_AR

Drain-source voltage

-5.3

Maximum power dissipation

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dV/dt ^c

T_C= 25 °C

E_AR

2.5

T_A= 25 °C

P_D

dV/dt

T_J, T_stg

5.8

V/ns

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

-55 to +150

300

°C

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 14)

b. V_DD= - 25 V, starting T_J= 25 °C, L = 9.7 mH, R_g= 25 Ω, peak I_L= - 5.3 A

c. I_SD≤ - 5.3 A, dI/dt ≤ - 80 A/μs, V_DD≤ 40 V, T_J≤ 150 °C, suggested R_g= 24 Ω

d. 0.063" (1.6 mm) from case

S21-0373-Rev. E, 19-Apr-2021

Document Number: 91378

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与IRFR9010, IRFU9010, SiHFR9010, SiHFU9010相关器件

型号	品牌	获取价格	描述	数据表
IRFR9010PBF	INFINEON	获取价格	Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRFR9010TR	INFINEON	获取价格	Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRFR9010TR	VISHAY	获取价格	Transistor
IRFR9010TRL	VISHAY	获取价格	Transistor
IRFR9010TRLPBF	VISHAY	获取价格	TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPA
IRFR9010TRPBF	VISHAY	获取价格	TRANSISTOR 5.3 A, 50 V, 0.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPA
IRFR9010TRR	INFINEON	获取价格	Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Meta
IRFR9012	VISHAY	获取价格	TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General
IRFR9012-T1	SAMSUNG	获取价格	Power Field-Effect Transistor, 4.5A I(D), 50V, 0.7ohm, 1-Element, P-Channel, Silicon, Meta
IRFR9012TR	VISHAY	获取价格	TRANSISTOR 4.5 A, 50 V, 0.7 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General

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