Datasheet > IRFR7440TR

IRFR7440TR

更新时间： 2024-11-22 17:15:51

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
8页	508K
描述
种类:N-Channel;漏源电压（Vdss）:40V;持续漏极电流（Id）（在25°C时）:90A;Vgs(th)(V):±20;漏源导通电阻:2.4mΩ@10V

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IRFR7440TR 数据手册

IRFR7440

UMW

40V N-Channel MOSFET

Applications

•

Brushed Motor drive applications

BLDC Motor drive applications

PWM Inverterized topologies

Battery powered circuits

•

Half-bridge and full-bridge topologies

Electronic ballast applications

Synchronous rectifier applications

Resonant mode power supplies

OR-ing and redundant power switches

DC/DC and AC/DC converters

Benefits

Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Fully Characterized Capacitance and Avalanche

SOA

Enhanced body diode dv/dt and dI/dt Capability

Lead-Free

RoHS Compliant containing no Lead, no Bromide,

and no Halogen

•

V_DS(V) =40V

I_D=90A (V_GS= 10V)

R_DS(ON)<2.4mΩ (V _GS=10V)

Absolute Maximum Ratings

Symbol

Parameter

Max.

Units

180

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

125

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Wire Bond Limited)

Pulsed Drain Current

760

140

Maximum Power Dissipation

Linear Derating Factor

P_D@T_C= 25°C

W/°C

0.95

± 20

Gate-to-Source Voltage

V_GS

dv/dt

T_J

4.4

Peak Diode Recovery

V/ns

-55 to + 175

Operating Junction and

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

Single Pulse Avalanche Energy

T_STG

300

E_{AS (Thermally limited)}

160

376

E_{AS (Thermally limited)}

Avalanche Current

I_AR

See Fig 15,16, 23a, 23b

1.05

Repetitive Avalanche Energy

Junction-to-Case

E_AR

R_θJC

R_θJA

°C/W

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

110

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7 8

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