Datasheet > IRFR5410

IRFR5410

更新时间： 2024-11-24 12:46:27

品牌	Logo	应用领域
科盛美 - KERSEMI		/
页数	文件大小	规格书
10页	2009K
描述
HEXFET Power MOSFET

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数据手册

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IRFR5410 数据手册

IRFR/U5410

HEXFET^®Power MOSFET

l Ultra Low On-Resistance

l P-Channel

l Surface Mount (IRFR5410)

l Straight Lead (IRFU5410)

l Advanced Process Technology

l Fast Switching

V_DSS= -100V

R_DS(on)= 0.205W

I_D= -13A

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

known for, provides the designer with an extremely efficient

and reliable device for use in a wide variety of applications.

D-Pak

I-Pak

TO-251AA

TO-252AA

The D-Pak is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU series) is for through-hole mounting

applications. Power dissipation levels up to 1.5 watts are

possible in typical surface mount applications.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ -10V

Pulsed Drain Current

-13

-8.2

-52

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.53

± 20

194

-8.4

6.3

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current

E_AR

dv/dt

T_J

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

-5.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Thermal Resistance

Parameter

Junction-to-Case

Typ.

Max.

1.9

Units

R_qJC

R_qJA

Junction-to-Ambient (PCB mount)**

Junction-to-Ambient

°C/W

110

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