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IRFP460 PDF预览

IRFP460

更新时间: 2024-11-23 22:51:39
品牌 Logo 应用领域
英特矽尔 - INTERSIL 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
7页 59K
描述
20A, 500V, 0.270 Ohm, N-Channel Power MOSFET

IRFP460 数据手册

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IRFP460  
Data Sheet  
July 1999  
File Number 2291.3  
20A, 500V, 0.270 Ohm, N-Channel  
Power MOSFET  
Features  
• 20A, 500V  
This N-Channel enhancement mode silicon gate power field  
effect transistor is an advanced power MOSFET designed,  
tested, and guaranteed to withstand a specified level of  
energy in the breakdown avalanche mode of operation. All of  
these power MOSFETs are designed for applications such  
as switching regulators, switching convertors, motor drivers,  
relay drivers, and drivers for high power bipolar switching  
transistors requiring high speed and low gate drive power.  
These types can be operated directly from integrated  
circuits.  
• r  
= 0.270  
DS(ON)  
• Single Pulse Avalanche Energy Rated  
• SOA is Power Dissipation Limited  
• Nanosecond Switching Speeds  
• Linear Transfer Characteristics  
• High Input Impedance  
• Related Literature  
- TB334 “Guidelines for Soldering Surface Mount  
Components to PC Boards”  
Formerly developmental type TA17465.  
Ordering Information  
Symbol  
PART NUMBER  
PACKAGE  
BRAND  
D
IRFP460  
TO-247  
IRFP460  
NOTE: When ordering, use the entire part number.  
G
S
Packaging  
JEDEC STYLE TO-247  
SOURCE  
DRAIN  
GATE  
DRAIN  
(TAB)  
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.  
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999  
4-359  

IRFP460 替代型号

型号 品牌 替代类型 描述 数据表
IRFP460PBF VISHAY

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