IRFP460AS

更新时间： 2024-01-02 08:38:57

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	118K
描述
Power MOSFET(Vdss=500V, Rds(on)max=0.27ohm, Id=20A)

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数据手册

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IRFP460AS 数据手册

PD-94011A

SMPS MOSFET

IRFP460AS

HEXFET^®Power MOSFET

Applications

l SMPS, UPS, Welding and High Speed

V_DSS

Rds(on) max

I_D

Power Switching

500V

0.27Ω

20A

Benefits

^lDynamic dv/dt Rating

l Repetitive Avalanche Rated

l Isolated Central Mounting Hole

l Fast Switching

l Ease of Paralleling

l Simple Drive Requirements

l Solder plated and leadformed for surface mounting

Description

Third Generation HEXFET^®s from International Rectifier provide the

designer with the best combination of fast switching, ruggedized

device design, low on-resistance and cost-effectiveness.

SMD-247

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of TO-220

devices. The TO-247 is similar but superior to the earlier TO-218

package because of its isolated mounting hole. It also provides

greater creepage distance between pins to meet the requirements of

most safety specifications.

This plated and leadformed version of the TO-247 package allows

the package to be surface mounted in an application.

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

280

W/°C

Linear Derating Factor

2.2

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

3.8

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Mounting torqe, 6-32 or M3 screw

Maximum Reflow Temperature

°C

10 lbf•in (1.1N•m)

230 (Time above 183 °C

should not exceed 100s)

Typical SMPS Topologies:

l Full Bridge

l PFC Boost

Notes through ꢀare on page 8

www.irf.com

01/17/01

12 3 4 5 6 7 8

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