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IRFP350LCPBF

更新时间： 2024-11-02 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1986K
描述
Power MOSFET

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数据手册
替代型号

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IRFP350LCPBF 数据手册

IRFP350LC, SiHFP350LC

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Ultra Low Gate Charge

• Reduced Gate Drive Requirement

• Enhanced 30V V_GSRating

• Reduced C_iss, C_oss, C_rss

• Isolated Central Mounting Hole

• Dynamic dV/dt Rated

400

Available

R_DS(on)(Ω)

V_GS= 10 V

0.30

RoHS*

COMPLIANT

Q_g(Max.) (nC)

_gs(nC)

_gd(nC)

• Repetitive Avalanche Rated

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-247

This new series of low charge Power MOSFETs achieve

significantly lower gate charge over conventional MOSFETs.

Utilizing advanced MOSFETs technology the device

improvements allow for reduced gate drive requirements,

faster switching speeds and increased total system savings.

These device improvements combined with the proven

ruggedness and reliability of MOSFETs offer the designer a

new standard in power transistors for switching applications.

The TO-247 package is preferred for commercial-industrial

applications where higher power levels preclude the use of

TO-220 devices. The TO-247 is similar but superior to the

earlier TO-218 package because of its isolated mounting

hole.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-247

IRFP350LCPbF

SiHFP350LC-E3

IRFP350LC

Lead (Pb)-free

SnPb

SiHFP350LC

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

400

V_GS

_C= 25 °C

Continuous Drain Current

_GSat 10 V

I_D

T_C=100°C

9.9

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.5

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

390

E_AR

190

Maximum Power Dissipation

T_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

4.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 2.7 µH, R_G= 25 Ω, I_AS= 16 A (see fig. 12).

c. I_SD≤ 16 A, dI/dt ≤ 200 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91224

S-Pending-Rev. A, 16-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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IRFP350LCPBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFP350PBF	VISHAY	功能相似	Power MOSFET
IRFP350	INTERSIL	功能相似	16A, 400V, 0.300 Ohm, N-Channel Power MOSFET
BUZ323	INFINEON	功能相似	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

与IRFP350LCPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFP350PBF	VISHAY	获取价格	Power MOSFET
IRFP350PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFP350R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 16A I(D) \| TO-247
IRFP351	SAMSUNG	获取价格	N-CHANNEL POWER MOSFETS
IRFP351R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 16A I(D) \| TO-247
IRFP352	SAMSUNG	获取价格	N-CHANNEL POWER MOSFETS
IRFP352R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 14A I(D) \| TO-247
IRFP353	SAMSUNG	获取价格	N-CHANNEL POWER MOSFETS
IRFP353R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 350V V(BR)DSS \| 14A I(D) \| TO-247
IRFP354	INFINEON	获取价格	Power MOSFET(Vdss=450V, Rds(on)=0.35ohm, Id=14A)

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