IRFM064UPBF

更新时间： 2024-11-16 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
7页	192K
描述
暂无描述

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFM064UPBF 数据手册

PD - 90875A

IRFM064

60V, N-CHANNEL

POWER MOSFET

THRU-HOLE (TO-254AA)

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFM064

0.017 Ω

35A*

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-254AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

35*

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

380

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

620

—

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

—

V/ns

dv/dt

4.5

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical)

Lead Temperature

Weight

*Current is limited by pin diameter

For footnotes refer to the last page

www.irf.com

1/29/02

12 3 4 5 6 7

中文翻译

下载PDF

与IRFM064UPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFM110	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 1.5A I(D) \| SOT-223
IRFM110A	FAIRCHILD	获取价格	Advanced Power MOSFET
IRFM110AD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.5A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRFM110AS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.5A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRFM110ATF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.5A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRFM120A	FAIRCHILD	获取价格	IEEE802.3af Compatible
IRFM120AD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IRFM120AL99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IRFM120AS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IRFM120ATF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met

与IRFM064UPBF相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

14
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

7
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

36
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFM064UPBF

IRFM064UPBF 数据手册

与IRFM064UPBF相关器件

与IRFM064UPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFM064UPBF

IRFM064UPBF 数据手册

与IRFM064UPBF相关器件

与IRFM064UPBF相关文章

您还可以找

您在本页遇到什么问题？