IRFM064UPBF

更新时间： 2024-09-27 13:08:47

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IRFM064UPBF 数据手册

PD - 90875A

IRFM064

60V, N-CHANNEL

POWER MOSFET

THRU-HOLE (TO-254AA)

HEXFET^®MOSFET TECHNOLOGY

Product Summary

Part Number

RDS(on)

IRFM064

0.017 Ω

35A*

HEXFET^®MOSFET technology is the key to International

Rectifier’s advanced line of power MOSFET transistors. The

efficient geometry design achieves very low on-state re-

sistance combined with high transconductance. HEXFET

transistors also feature all of the well-established advan-

tages of MOSFETs, such as voltage control, very fast switch-

ing, ease of paralleling and electrical parameter temperature

stability. They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, choppers,

audio amplifiers, high energy pulse circuits, and virtually

any application where high reliability is required. The

HEXFET transistor’s totally isolated package eliminates the

need for additional isolating material between the device

and the heatsink. This improves thermal efficiency and

reduces drain capacitance.

TO-254AA

Features:

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Electrically Isolated

Dynamic dv/dt Rating

Light-weight

Absolute Maximum Ratings

Parameter

Units

@ V

= 10V, T = 25°C

Continuous Drain Current

35*

= 10V, T = 100°C Continuous Drain Current

Pulsed Drain Current ➀

Max. Power Dissipation

380

@ T = 25°C

250

W/°C

Linear Derating Factor

2.0

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

620

—

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

—

V/ns

dv/dt

4.5

-55 to 150

Storage Temperature Range

^oC

STG

300 ( 0.063 in.(1.6mm) from case for 10s)

9.3 (Typical)

Lead Temperature

Weight

*Current is limited by pin diameter

For footnotes refer to the last page

www.irf.com

1/29/02

12 3 4 5 6 7

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与IRFM064UPBF相关器件

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IRFM110AS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.5A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRFM110ATF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 1.5A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IRFM120A	FAIRCHILD	获取价格	IEEE802.3af Compatible
IRFM120AD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IRFM120AL99Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IRFM120AS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IRFM120ATF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met

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