Datasheet > IRFM120ATF

IRFM120ATF

更新时间： 2024-11-17 11:13:51

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲光电二极管晶体管
页数	文件大小	规格书
8页	379K
描述
100V N沟道A-FET / IRFM120的替代器件

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技术参数
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IRFM120ATF 技术参数

是否无铅：	不含铅	生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G4	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	HTS代码：	8541.29.00.95
Factory Lead Time：	10 weeks	风险等级：	0.96
Samacsys Confidence：	3	Samacsys Status：	Released
Samacsys PartID：	2562236	Samacsys Pin Count：	4
Samacsys Part Category：	MOSFET (N-Channel)	Samacsys Package Category：	SOT223 (3-Pin)
Samacsys Footprint Name：	SOT-223 ST SUFFIX CASE 318E-04 ISSUE O	Samacsys Released Date：	2019-12-17 07:18:02
Is Samacsys：	N	雪崩能效等级（Eas）：	123 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V	最大漏极电流 (Abs) (ID)：	2.3 A
最大漏极电流 (ID)：	2.3 A	最大漏源导通电阻：	0.2 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-PDSO-G4
JESD-609代码：	e3	湿度敏感等级：	1
元件数量：	1	端子数量：	4
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	2.4 W
最大脉冲漏极电流 (IDM)：	18 A	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	DUAL	处于峰值回流温度下的最长时间：	NOT SPECIFIED
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

IRFM120ATF 数据手册

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与IRFM120ATF相关器件

型号	品牌	获取价格	描述	数据表
IRFM120ATF_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.3A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Met
IRFM1310ST	SEME-LAB	获取价格	N?CHANNEL POWER MOSFET
IRFM1310ST		获取价格	N-Channel Power MOSFET
IRFM140	INFINEON	获取价格	HEXFET TRANSISTOR
IRFM140	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET
IRFM140D	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 28A I(D) \| TO-254VAR
IRFM140PBF	INFINEON	获取价格	暂无描述
IRFM140U	INFINEON	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 28A I(D) \| TO-254VAR
IRFM150	INFINEON	获取价格	REPETITIVE AVALANCHE RATED AND dv/dt RATED
IRFM150	TEMIC	获取价格	Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Me

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