是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.15 | 雪崩能效等级(Eas): | 150 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (Abs) (ID): | 34 A |
最大漏极电流 (ID): | 34 A | 最大漏源导通电阻: | 0.081 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-254AA |
JESD-30 代码: | R-MSFM-P3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | METAL | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 150 W |
最大脉冲漏极电流 (IDM): | 136 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | PIN/PEG |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFM150UPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 34A I(D), 100V, 0.081ohm, 1-Element, N-Channel, Silicon, Me |
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IRFM210 | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET |
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IRFM210A | FAIRCHILD |
获取价格 |
Advanced Power MOSFET (200V, 1.5ohm, 0.77A) |
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IRFM210AD84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 0.77A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me |
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IRFM210AL99Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 0.77A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Me |
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IRFM210ATF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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IRFM210B | FAIRCHILD |
获取价格 |
200V N-Channel MOSFET |
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IRFM210BD84Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 0.77A I(D), 200V, 1-Element, N-Channel, Silicon, Met |
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IRFM210BL99Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 0.77A I(D), 200V, 1-Element, N-Channel, Silicon, Met |
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IRFM210BS62Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 0.77A I(D), 200V, 1-Element, N-Channel, Silicon, Met |
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