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IRFM110AD84Z PDF预览

IRFM110AD84Z

更新时间: 2024-09-27 14:51:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 265K
描述
Power Field-Effect Transistor, 1.5A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRFM110AD84Z 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.82雪崩能效等级(Eas):60 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):1.5 A
最大漏源导通电阻:0.4 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFM110AD84Z 数据手册

 浏览型号IRFM110AD84Z的Datasheet PDF文件第2页浏览型号IRFM110AD84Z的Datasheet PDF文件第3页浏览型号IRFM110AD84Z的Datasheet PDF文件第4页浏览型号IRFM110AD84Z的Datasheet PDF文件第5页浏览型号IRFM110AD84Z的Datasheet PDF文件第6页浏览型号IRFM110AD84Z的Datasheet PDF文件第7页 
IRFM110A  
Advanced Power MOSFET  
FEATURES  
BVDSS = 100 V  
Avalanche Rugged Technology  
Rugged Gate Oxide Technology  
Lower Input Capacitance  
W
RDS(on) = 0.4  
ID = 1.5 A  
Improved Gate Charge  
Extended Safe Operating Area  
SOT-223  
m
Lower Leakage Current : 10 A (Max.) @ VDS = 100V  
2
W
Lower RDS(ON) : 0.289 (Typ.)  
1
3
1. Gate 2. Drain 3. Source  
Absolute Maximum Ratings  
Symbol  
Characteristic  
Value  
Units  
VDSS  
Drain-to-Source Voltage  
V
100  
1.5  
O
O
C
C
Continuous Drain Current (TA=25  
)
)
ID  
A
Continuous Drain Current (T =70  
1.19  
12  
A
IDM  
VGS  
EAS  
IAR  
1
Drain Current-Pulsed  
A
V
O
+
_
20  
Gate-to-Source Voltage  
Single Pulsed Avalanche Energy  
Avalanche Current  
2
O
mJ  
A
60  
1
1.5  
0.2  
O
EAR  
dv/dt  
Repetitive Avalanche Energy  
1
mJ  
V/ns  
W
O
3
Peak Diode Recovery dv/dt  
6.5  
O
O
*
C
Total Power Dissipation (TA=25  
)
2
PD  
O
*
Linear Derating Factor  
Operating Junction and  
W/ C  
0.016  
TJ , TSTG  
- 55 to +150  
300  
Storage Temperature Range  
Maximum Lead Temp. for Soldering  
Purposes, 1/8” from case for 5-seconds  
O
C
TL  
Thermal Resistance  
Symbol  
Characteristic  
Typ.  
--  
Max.  
Units  
O
RqJA  
*
Junction-to-Ambient  
62  
C/  
W
*
When mounted on the minimum pad size recommended (PCB Mount).  
Rev. B  
©1999 Fairchild Semiconductor Corporation  

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