Datasheet > IRFIB7N50A

IRFIB7N50A

更新时间： 2024-09-15 22:05:03

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	97K
描述
Power MOSFET(Vdss=500V, Rds(on)max=0.52ohm, Id=6.6A)

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数据手册

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IRFIB7N50A 数据手册

PD - 91810

IRFIB7N50A

HEXFET^®Power MOSFET

SMPS MOSFET

Applications

l Switch Mode Power Supply ( SMPS )

V_DSS

Rds(on) max

I_D

500V

0.52Ω

6.6A

l Uninterruptable Power Supply

l High speed power switching

l High Voltage Isolation = 2.5KVRMS

Benefits

l Low Gate Charge Qg results in Simple

Drive Requirement

l Improved Gate, Avalanche and dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

l Effective Coss specified ( See AN 1001)

G D S

TO-220 FULLPAK

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

6.6

4.2

P_D@T_C= 25°C

Power Dissipation

W/°C

Linear Derating Factor

0.48

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

6.9

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting torqe, 6-32 or M3 screw

°C

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Applicable Off Line SMPS Topologies:

l Two Transistor Forward

l Half & Full Bridge Convertors

l Power Factor Correction Boost

Notes through are on page 8

www.irf.com

6/15/99

12 3 4 5 6 7 8

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与IRFIB7N50A相关器件

型号	品牌	获取价格	描述	数据表
IRFIB7N50A-031	VISHAY	获取价格	Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Me
IRFIB7N50A-107	VISHAY	获取价格	Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Me
IRFIB7N50APBF	INFINEON	获取价格	SMPS MOSFET
IRFIB7N50APBF	VISHAY	获取价格	Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Me
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